# US 7,608,868 B2 · Semiconductor device and method for manufacturing the same

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- Number: US 7,608,868 B2
- Document ID: US7608868B2
- Status: Granted
- Kind: B2
- Application number: 11/509,730
- Filed: 2006-08-25
- Published: 2006-12-21
- Granted: 2009-10-27
- Earliest claimed: 2004-12-08
- Assignees: Hynix Semiconductor Inc.
- Inventors: Sang Don Lee; Yil Wook Kim; Jin Hong Ahn
- Web page: https://patentgrep.com/patent/US7608868B2

## CPC

- H10D 30/0323: {comprising monocrystalline silicon}
- H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
- H10D 30/603: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]}
- H10D 30/6706: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)}
- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor substrate having an active region defined by a device isolation film;
a gate structure having a first side and a second side, the gate structure comprising a stacked structure of a gate insulating film, a gate electrode and a first CVD insulating film;
a first sidewall spacer and a second sidewall spacer respectively disposed on the first side and the second side of the gate structure;
an LDD region disposed in a first Si epitaxial layer under the gate insulating film;
a second Si epitaxial layer and a buried oxide film disposed under the LDD region and the first Si epitaxial layer, wherein the second Si epitaxial layer is disposed adjacent to the buried oxide film, the buried oxide film filling a recess disposed on a surface of the semiconductor substrate adjacent to the second sidewall spacer; and
a source/drain region disposed on the second Si epitaxial layer and the buried oxide film.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the second Si epitaxial layer fills a recess disposed on a surface of the semiconductor substrate adjacent to the first sidewall spacer.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein the second Si epitaxial layer covers a sidewall of the LDD region under the first sidewall spacer and the second sidewall spacer.

### Claim 4

A semiconductor device comprising a gate insulating film, a gate electrode, first and second sidewall spacers disposed at opposite sides of the gate electrode, a channel region, an LDD region and a source/drain region disposed at both sides of the LDD region, the semiconductor device further comprising:
a second Si epitaxial layer disposed under the channel region extending to the source/drain region in a first direction; and
a buried oxide film disposed adjacent to the second Si epitaxial layer and disposed under the channel region extending to the source/drain region in a second direction opposite to the first direction, wherein the buried oxide film fills a recess disposed on a surface of the semiconductor substrate adjacent to the second sidewall spacer.