# US 7,608,867 B2 · Vertical IMOS transistor having a PIN diode formed within

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- Number: US 7,608,867 B2
- Document ID: US7608867B2
- Status: Granted
- Kind: B2
- Application number: 11/393,616
- Filed: 2006-03-30
- Published: 2006-10-05
- Granted: 2009-10-27
- Earliest claimed: 2005-03-30
- Assignees: STMicroelectronics (Crolles 2) SAS
- Inventors: Clément Charbuillet; Thomas Skotnicki; Alexandre Villaret
- Web page: https://patentgrep.com/patent/US7608867B2

## CPC

- H10D 8/50: PIN diodes
- H10D 12/211: {Gated diodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A vertical IMOS-type transistor including: a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type forming a PIN-type diode; and a conductive gate placed against the stack with an interposed insulating layer.

## Claims

### Claim 1

A vertical IMOS-type transistor comprising:
a conductive access area placed in a upper part of a substrate and surrounded with an insulating area;
a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type forming a PIN-type diode, the stack being placed on the conductive access area, said third portion being placed on the top of the stack and partly disposed on top of said insulating area to form an extension;
a conductive gate placed against said stack with an interposed insulating layer; and
at least one first contact electrically connected to the extension providing access to said third portion to form the vertical IMOS-type transistor.

### Claim 2 (depends on 1)

The transistor of claim 1, wherein the substrate is a semiconductor wafer or an upper semiconductor layer of an SOI wafer.

### Claim 3 (depends on 1)

The transistor of claim 1, wherein said gate is formed of at least one gate spacer.

### Claim 4 (depends on 1)

The transistor of claim 1, further comprising at least one second contact placed above a portion of said access area.

### Claim 5 (depends on 3)

The transistor of claim 3, wherein said access area has a substantially rectangular shape, said third portion is formed of first and second strips forming a T, a first strip being placed above the access area, transversely thereto, so that in top view two portions of the access area are placed on either side of this first strip, first strip extending over said insulating area, the second strip being placed above said insulating area against one end of the first strip, first gate spacers being placed against said stack above said conductive access area and second gate spacers being placed against parts of the third portion placed above insulating area, and further comprising a third conductive strip surrounding said first strip and laterally extending above the insulating area, the third strip being in contact with said second gate spacers.

### Claim 6 (depends on 1)

The transistor of claim 1, wherein said conductive gate does not extend from the bottom to the top of said stack, the gate being placed against all or part of the second intrinsic semiconductor portion and possibly extending against all or part of one of the first and third doped semiconductor portions.

### Claim 7

A vertical IMOS-type transistor comprising:
a conductive area surrounded by an insulating area;
a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type, said third portion being placed on the top of the stack, the stack placed on the conductive area and said third portion is partly disposed on top of said insulating area to form an extension;
a conductive gate connected to said stack; and
at least one contact electrically connected to the extension providing access to said third portion to form the vertical IMOS-type transistor.

### Claim 8 (depends on 7)

The transistor of claim 7, wherein the stack forms a PIN diode.

### Claim 9 (depends on 7)

The transistor of claim 7, wherein the conductive gate is placed against said stack with an interposed insulating layer.