# US 7,608,860 B2 · Light emitting devices suitable for flip-chip bonding > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,860 B2 - Document ID: US7608860B2 - Status: Granted - Kind: B2 - Application number: 11/772,419 - Filed: 2007-07-02 - Published: 2007-10-18 - Granted: 2009-10-27 - Earliest claimed: 2001-07-23 - Assignees: Cree, Inc.; Cree Microwave, Inc. - Inventors: David B. Slater, Jr.; Jayesh Bharathan; John Edmond; Mark Raffetto; Anwar Mohammed; Peter S. Andrews; Gerald H. Negley - Web page: https://patentgrep.com/patent/US7608860B2 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/831: characterised by their shape - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/387: {Flow barriers} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided. ## Claims ### Claim 1 A light emitting device die, comprising: a gallium nitride based active region including, a p-type layer; a p-electrode on the p-type layer, the p-electrode having sidewalls; and a predefined pattern of conductive die attach material on the p-electrode opposite the p-type layer that substantially prevents the conductive die attach material from contacting the sidewalls of the p-electrode when the light emitting device die is mounted to a submount. ### Claim 2 (depends on 1) The die of claim 1, wherein the predefined pattern of conductive die attach material provides a volume of die attach material that is less than a volume defined by an area of the p-electrode and a distance between the p-electrode and the submount. ### Claim 3 (depends on 1) The die of claim 1, wherein the predefined pattern comprises a single nodule of conductive die attach material on the p-electrode. ### Claim 4 (depends on 1) The die of claim 1, wherein the predefined pattern comprises a plurality of bumps of conductive die attach material on the p-electrode. ### Claim 5 (depends on 1) The die of claim 1, wherein the predefined pattern comprises a plurality of lines of conductive die attach material on the p-electrode. ### Claim 6 (depends on 1) The die of claim 1, wherein the predefined pattern comprises a criss-cross pattern of conductive die attach material on the p-electrode. ### Claim 7 (depends on 1) The die of claim 1, wherein the conductive die attach material comprises at least one of a B-stage curable die epoxy, a solder paste, a pattern of solder bumps, and/or a conductive polymer. ### Claim 8 (depends on 1) The die of claim 1, further comprising a submount, wherein the p-electrode is mounted to the submount by the predefined pattern of conductive die attach material. ### Claim 9 (depends on 1) The die of claim 1, further comprising an n-electrode on the gallium nitride based active region opposite the p-electrode. ### Claim 10 (depends on 1) The die of claim 1, further comprising an n-electrode on a same side of the gallium nitride based active region as the p-electrode. ### Claim 11 A light emitting device die, comprising: a gallium nitride based active region including a p-type layer; a p-electrode on the p-type layer; and a B-stage conductive epoxy on the p-electrode opposite the p-type layer. ### Claim 12 (depends on 11) The die of claim 11, wherein the p-electrode has sidewalls. ### Claim 13 (depends on 11) The die of claim 11, further comprising an n-electrode on the gallium nitride based active region opposite the p-electrode. ### Claim 14 (depends on 11) The die of claim 11, further comprising an n-electrode on a same side of the gallium nitride based active region as the p-electrode. ### Claim 15 (depends on 11) The die of claim 11, wherein the B-stage conductive epoxy is on the p-electrode in a predefined pattern. ### Claim 16 (depends on 11) The die of claim 11, further comprising a submount, wherein the p-electrode is mounted to the submount by the B-stage conductive epoxy. ### Claim 17 (depends on 12) The die of claim 12 wherein the B-stage conductive epoxy is on the p-electrode in a predefined pattern that substantially prevents the B-stage conductive epoxy from contacting the sidewalls of the p-electrode when the light emitting device die is mounted to a submount. ### Claim 18 (depends on 15) The die of claim 15, wherein the predefined pattern of conductive die attach material provides a volume of die attach material that is less than a volume defined by an area of the p-electrode and a distance between the p-electrode and the submount. ### Claim 19 (depends on 15) The die of claim 15, wherein the predefined pattern comprises a single nodule of B-stage conductive epoxy on the p-electrode. ### Claim 20 (depends on 15) The die of claim 15, wherein the predefined pattern comprises a plurality of bumps of B-stage conductive epoxy on the p-electrode. ### Claim 21 (depends on 15) The die of claim 15, wherein the predefined pattern comprises a plurality of lines of B-stage conductive epoxy on the p-electrode. ### Claim 22 (depends on 15) The die of claim 15, wherein the predefined pattern comprises a criss-cross pattern of B-stage conductive epoxy on the p-electrode.