# US 7,608,859 B2 · Semiconductor light-emitting device with transparent conductive film

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- Number: US 7,608,859 B2
- Document ID: US7608859B2
- Status: Granted
- Kind: B2
- Application number: 11/485,316
- Filed: 2006-07-13
- Published: 2007-04-05
- Granted: 2009-10-27
- Earliest claimed: 2005-09-30
- Assignees: Hitachi Cable, Ltd.
- Inventors: Taichiroo Konno; Kazuyuki Iizuka; Masahiro Arai
- Web page: https://patentgrep.com/patent/US7608859B2

## CPC

- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H 20/81: Bodies
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10P 14/2911: {Arsenides}
- H10P 14/3218: {Phosphides}
- H10P 14/3221: {Arsenides}
- H10P 14/3421: {Arsenides}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.

## Claims

### Claim 1

A semiconductor light-emitting device with a transparent conductive film, comprising:
a light-emitting portion formed on a semiconductor substrate, said light-emitting portion comprising at least an n-type clad layer, an active layer and a p-type clad layer doped with Mg;
an As-based contact layer formed on said light-emitting portion, said contact layer being doped with Zn as a p-type dopant of 1×1019/cm3 or more;
a current spreading layer formed on said contact layer, said current spreading layer comprising a transparent conductive film of a metal oxide material; and
a buffer layer formed between said contact layer and said p-type clad layer;
wherein said buffer layer comprises at least two or more buffer layer parts, and adjacent buffer layer parts are different from each other in material or composition,
wherein said buffer layer parts comprise a material that is transparent with respect to a light with an emission peak wavelength, and
wherein at least one of said two or more buffer layer parts alternately formed comprises an undoped layer.

### Claim 2 (depends on 1)

The semiconductor light-emitting device with a transparent conductive film according to claim 1, wherein:
said undoped layer has a carbon density of 5×1017 atoms/cm3 or less.