# US 7,608,855 B2 · Polymer dielectrics for memory element array interconnect > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,855 B2 - Document ID: US7608855B2 - Status: Granted - Kind: B2 - Application number: 10/817,467 - Filed: 2004-04-02 - Published: 2005-10-13 - Granted: 2009-10-27 - Earliest claimed: 2004-04-02 - Assignees: Spansion LLC - Inventors: Christopher F. Lyons - Web page: https://patentgrep.com/patent/US7608855B2 ## CPC - G11C 13/0014: {comprising cells based on organic memory material} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - G11C 11/5664: {using organic memory material storage elements} - G11C 13/0009: {RRAM elements whose operation depends upon chemical change} - G11C 13/0016: {comprising polymers} - G11C 13/0069: {Writing or programming circuits or methods} - H10K 19/202: {Integrated devices comprising a common active layer} - G11C 2013/009: {Write using potential difference applied between cell electrodes} - G11C 2213/71: Three dimensional array - G11C 2213/77: Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used - H10K 10/26: Diodes comprising organic-organic junctions - H10K 85/10: Organic polymers or oligomers - H10K 85/111: {comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene} - H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene} - H10K 85/143: {Polyacetylene; Derivatives thereof} - H10K 85/146: {poly N-vinylcarbazol; Derivatives thereof} - H10K 85/311: {Phthalocyanine} - H10K 85/40: Organosilicon compounds, e.g. TIPS pentacene - G11C: STATIC STORES (semiconductor memory devices H10B) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract Disclosed are semiconductor devices containing a polymer dielectric and at least one active device containing an organic semiconductor material and a passive layer. Also disclosed are semiconductor devices further containing a conductive polymer. Such devices are characterized by light weight and robust reliability. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate; a polymer dielectric over the substrate; and at least one active device comprising an organic semiconductor material and a passive layer, wherein coefficients of thermal expansion of the polymer dielectric and organic semiconductor material are substantially matched. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the polymer dielectric comprises at least one selected from the group consisting of polyimides, fluorinated polyimides, polysilsequioxanes such as hydrogen polysilsequioxanes, methyl polysilsequioxanes, butyl polysilsequioxanes, and phenyl polysilsequioxanes, benzocyclobutenes (BCB), fluorinated benzocyclobutene, polyphenylene, polysilazanes, polyphenylquinoxaline, copolymers of 2,2-bistrifluoromethyl-4,5-difluoro-1,3-dioxole, perfluoroalkoxy resin, fluorinated ethylene propylene, fluoromethacrylate, poly(arylene ether), fluorinated poly(arylene ether), fluorinated parylenes, poly(p-xylxylenes), fluorinated poly(p-xylxylenes), parylene F, parylene N, parylene C, parylene D, amorphous polytetrafluoroethylene, polyquinoline, polyphenylquinoxalines, and polymeric photoresist materials. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the polymer dielectric comprises a self patternable material. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the polymer dielectric has a glass transition temperature or a melting point of about 125° C. or higher and about 425° C. or less. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the polymer dielectric has a dielectric constant below about 3. ### Claim 6 (depends on 1) The semiconductor device of claim 1 further comprising a conductive polymer. ### Claim 7 (depends on 1) The semiconductor device of claim 1, wherein the organic semiconductor material comprises at least one selected from the group consisting of polyacetylene; polydiphenylacetylene; poly(t-butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl) diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polyphenylacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-butyl)phenylacetylene; polynitro-phenylacetylene; poly(trifluoromethyl) phenylacetylene; poly(trimethylsilyl)phenylacetylene; polydipyrrylmethane; polyindoquinone; polydihydroxyindole; polytrihydroxyindole; furane-polydihydroxyindole; polyindoquinone-2-carboxyl; polyindoquinone; polybenzobisthiazole; poly(p-phenylene sulfide); polyaniline: polythiophene; polypyrrole; polysilane; polystyrene; polyfuran; polyindole; polyazulene; polyphenylene; polypyridine; polybipyridine; polyphthalocyanine; polysexithiofene; poly(siliconoxohemiporphyrazine); poly(germaniumoxohemiporphyrazine); poly(ethylenedioxythiophene); polymetallocene complexes; and polypyridine metal complexes. ### Claim 8 (depends on 1) The semiconductor device of claim 1, wherein the passive layer comprises at least one selected from the group consisting of copper sulfide, copper rich copper sulfide, copper oxide, copper selenide, copper telluride, manganese oxide, titanium dioxide, indium oxide, silver sulfide, gold sulfide, iron oxide, cobalt arsenide, and nickel arsenide. ### Claim 9 (depends on 1) The semiconductor device of claim 1, wherein at least one active device comprises a first and a second electrode, a passive layer adjacent the first electrode, and the organic semiconductor material adjacent the second electrode. ### Claim 10 (depends on 1) The semiconductor device of claim 1, further comprising two electrodes, wherein the active device is between the two electrodes. ### Claim 11 (depends on 10) The semiconductor device of claim 10, wherein the polymer dielectric comprises at least one selected from the group consisting of polyimides, fluorinated polyimides, polysilsequioxanes such as hydrogen polysilsequioxanes, methyl polysilsequioxanes, butyl polysilsequioxanes, and phenyl polysilsequioxanes, benzocyclobutenes (BCB), fluorinated benzocyolobutene, polyphenylene, polysilazanes, polyphenylquinoxaline, copolymers of 2,2-bistrifluoromethyl-4,5-difluoro-1,3-dioxole, perfluoroalkoxy resin, fluorinated ethylene propylene, fluoromethacrylate, poly(arylene ether), fluorinated poly(arylene ether), fluorinated parylenes, poly(p-xylxylenes), fluorinated poly(p-xylxylenes), parylene F, parylene N, parylene C, parylene D, amorphous polytetrafluoroethylene, polyquinoline, polyphenylquinoxalines, and polymeric photoresist materials. ### Claim 12 (depends on 10) The semiconductor device of claim 10, wherein the polymer dielectric has a glass transition temperature or a melting point of about 135° C. or higher and about 400° C. or less. ### Claim 13 (depends on 10) The semiconductor device of claim 10, wherein the polymer dielectric has a dielectric constant below about 2.4. ### Claim 14 (depends on 10) The semiconductor device of claim 10, wherein the polymer dielectric is formed by one of spin-on techniques and chemical vapor deposition techniques. ### Claim 15 (depends on 10) The semiconductor device of claim 10, wherein the organic semiconductor material comprises at least one selected from the group consisting of polyacetylene; polydiphenylacetylene; poly(t-butyl)diphenylacetylene; poly(trifluoromethyl)diphenylacetylene; polybis(trifluoromethyl)acetylene; polybis(t-butyldiphenyl)acetylene; poly(trimethylsilyl) diphenylacetylene; poly(carbazole)diphenylacetylene; polydiacetylene; polyphenylacetylene; polypyridineacetylene; polymethoxyphenylacetylene; polymethylphenylacetylene; poly(t-butyl)phenylacetylene; polynitro-phenylacetylene; poly(trifluoromethyl) phenylacetylene; poly(trimethylsilyl)phenylacetylene; polydipyrrylmethane; polyindoquinone; polydihydroxyindole; polytrihydroxyindole; furane-polydihydroxyindole; polyindoquinone-2-carboxyl; polyindoquinone; polybenzobisthiazole; poly(p-phenylene sulfide); polyaniline; polythiophene; polypyrrole; polysilane; polystyrene; polyfuran; polyindole; polyazulene; polyphenylene; polypyridine; polybipyridine; polyphthalocyanine; polysexithiofene; poly(siliconoxohemiporphyrazine); poly(germaniumoxohemiporphyrazine); poly(ethylenedioxythiophene); polymetallocene complexes; and polypyridine metal complexes. ### Claim 16 (depends on 10) The semiconductor device of claim 10, wherein the passive layer comprises at least one selected from the group consisting of copper sulfide, copper rich copper sulfide, copper oxide, copper selenide, copper telluride, manganese oxide, titanium dioxide, indium oxide, silver sulfide, gold sulfide, iron oxide, cobalt arsenide, and nickel arsenide. ### Claim 17 A semiconductor device, comprising: a substrate; a polymer dielectric over the substrate; at least one active device comprising an organic semiconductor material and a passive layer; and a conductive polymer adjacent at least one active device, wherein coefficients of thermal expansion of the polymer dielectric and organic semiconductor material are substantially matched. ### Claim 18 (depends on 17) The semiconductor device of claim 17, wherein the polymer dielectric has a glass transition temperature or a melting point of about 125° C. or higher and about 425° C. or less and a dielectric constant below about 3. ### Claim 19 (depends on 17) The semiconductor device of claim 17, wherein the polymer dielectric comprises at least one selected from the group consisting of polyimides, fluorinated polyimides, polysilsequioxanes such as hydrogen polysilsequioxanes, methyl polysilsequioxanes, butyl polysilsequioxanes, and phenyl polysilsequioxanes, benzocyclobutenes (BCB), fluorinated benzocyclobutene, polyphenylene, polysilazanes, polyphenylquinoxaline, copolymers of 2,2-bistrifluoromethyl-4,5-difluoro-1,3-dioxole, perfluoroalkoxy resin, fluorinated ethylene propylene, fluoromethacrylate, poly(arylene ether), fluorinated poly(arylene ether), fluorinated parylenes, poly(p-xylxylenes), fluorinated poly(p-xylxylenes), parylene F, parylene N, parylene C, parylene D, amorphous polytetrafluoroethylene, polyquinoline, polyphenylquinoxalines, and polymeric photoresist materials. ### Claim 20 (depends on 17) The semiconductor device of claim 17, wherein the active device comprises a polymer memory device comprising the organic semiconductor material and the passive layer between two electrodes, the organic semiconductor material comprising a conjugated polymer.