# US 7,608,854 B2 · Electronic device and method of making the same

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- Number: US 7,608,854 B2
- Document ID: US7608854B2
- Status: Granted
- Kind: B2
- Application number: 11/668,136
- Filed: 2007-01-29
- Published: 2008-07-31
- Granted: 2009-10-27
- Earliest claimed: 2007-01-29
- Assignees: Hewlett-Packard Development Company, L.P.
- Inventors: Theodore I. Kamins
- Web page: https://patentgrep.com/patent/US7608854B2

## CPC

- H10K 10/46: Field-effect transistors, e.g. organic thin-film transistors [OTFT] (H10K10/43 takes precedence)
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 10/00: Bipolar junction transistors [BJT]
- H10D 30/80: FETs having rectifying junction gate electrodes (H10D30/40 takes precedence)
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/121: {oriented parallel to substrates}
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/279: {Vapour-liquid-solid growth}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3402: {characterised by the chemical composition}
- H10P 14/3441: {Conductivity type}
- H10P 14/3462: {Nanowires}
- H10K 85/221: {Carbon nanotubes}
- Y10S 438/962: Quantum dots and lines
- Y10S 977/762: Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.

## Claims

### Claim 1

An electronic device, comprising:
a primary nanowire of a first conductivity type;
a secondary nanowire of a second conductivity type crown from and extending outwardly in one direction from the primary nanowire; and
a doped region of the second conductivity type diffused from and extending from the secondary nanowire into at least a portion of the primary nanowire.

### Claim 2 (depends on 1)

The electronic device as defined in claim 1 wherein the doped region of the second conductivity type extends through at least a portion of an electrically active thickness of the primary nanowire.

### Claim 3 (depends on 2)

The electronic device as defined in claim 2 wherein the electronic device is a junction field-effect transistor.

### Claim 4 (depends on 2)

The electronic device as defined in claim 2 wherein the doped region extends through the entire electrically active thickness of the primary nanowire.

### Claim 5 (depends on 4)

The electronic device as defined in claim 4 wherein the electronic device is a bipolar junction transistor.

### Claim 6 (depends on 4)

The electronic device as defined in claim 4 wherein the doped region of the second conductivity type divides the primary nanowire into an emitter segment and a collector segment.

### Claim 7 (depends on 4)

The electronic device as defined in claim 4 wherein the first conductivity type is n-type conductivity, and wherein the second conductivity type is p-type conductivity.

### Claim 8 (depends on 1)

The electronic device as defined in claim 1 wherein the first conductivity type is one of p-type conductivity or n-type conductivity, and wherein the second conductivity type is an other of n-type conductivity or p-type conductivity.

### Claim 9 (depends on 1)

The electronic device as defined in claim 1 wherein the electronic device is a diode, and wherein the electronic device further comprises:
an electrical connection operatively connected to a terminal end of the primary nanowire; and
an electrical connection operatively connected to a terminal end of the secondary nanowire.

### Claim 10

A method of making an electronic device, the method comprising:
growing a primary nanowire having a first conductivity type;
growing, in one direction, a secondary nanowire having a second conductivity type from a surface of the primary nanowire; and
diffusing a doped region of the second conductivity type from the secondary nanowire into at least a portion of the primary nanowire.

### Claim 11 (depends on 10)

The method as defined in claim 10 wherein growing the secondary nanowire is accomplished by:
establishing a sacrificial layer about the primary nanowire and to a predetermined height, whereby a portion of the primary nanowire is exposed;
establishing a catalyst nanoparticle on an area of the exposed portion of the primary nanowire that is adjacent to the sacrificial layer; and
exposing the catalyst nanoparticle to a precursor gas that initiates growth of the secondary nanowire.

### Claim 12 (depends on 11)

The method as defined in claim 11 wherein establishing the catalyst nanoparticle is accomplished by depositing a pre-formed catalyst nanoparticle or by depositing a material that forms the catalyst nanoparticle.

### Claim 13 (depends on 12)

The method as defined in claim 12 wherein depositing is accomplished via physical deposition processes, solution deposition processes, chemical deposition processes, electrochemical deposition processes, or combinations thereof.

### Claim 14 (depends on 10)

The method as defined in claim 10 wherein diffusing is accomplished by exposing the primary and secondary nanowires to a predetermined temperature for a predetermined time.

### Claim 15 (depends on 14)

The method as defined in claim 14 wherein diffusing is controlled so that the doped region of the second conductivity type extends through a portion of an electrically active thickness of the primary nanowire.

### Claim 16 (depends on 14)

The method as defined in claim 14 wherein diffusing is controlled so that the doped region of the second conductivity type extends through substantially an entire thickness of the primary nanowire.

### Claim 17 (depends on 10)

The method as defined in claim 10 wherein the primary nanowire is grown from one of two opposed sidewalls to an other of the two opposed sidewalls.

### Claim 18 (depends on 10)

The method as defined in claim 10, further comprising:
operatively connecting at least one electrical connection to a terminal end of the primary nanowire; and
operatively connecting an electrical connection to a terminal end of the secondary nanowire.

### Claim 19

A junction field effect transistor, comprising:
a primary nanowire of a first conductivity type having first and second opposed terminal ends;
a secondary nanowire of a second conductivity type grown from and extending outwardly in one direction from the primary nanowire, the secondary nanowire having a third terminal end; and
a respective electrical connection operatively connected to each of the first, second and third terminal ends.

### Claim 20 (depends on 19)

The junction field effect transistor as defined in claim 19 wherein the first conductivity type is one of p-type conductivity or n-type conductivity, and wherein the second conductivity type is an other of n-type conductivity or p-type conductivity.