# US 7,608,853 B2 · Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same

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- Number: US 7,608,853 B2
- Document ID: US7608853B2
- Status: Granted
- Kind: B2
- Application number: 12/278,331
- Filed: 2008-06-27
- Published: 2009-02-05
- Granted: 2009-10-27
- Earliest claimed: 2006-02-21
- Assignees: Electronics and Telecommunications Research Institute
- Inventors: Chul Huh; Rae-Man Park; Jae-Heon Shin; Kyung-Hyun Kim; Tae-Youb Kim; Kwan-Sik Cho; Gun-Yong Sung
- Web page: https://patentgrep.com/patent/US7608853B2

## CPC

- H10H 20/826: comprising only Group IV materials
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/818: within the light-emitting regions
- Y10S 438/962: Quantum dots and lines
- Y10S 977/773: Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S 977/774: Exhibiting three-dimensional carrier confinement, e.g. quantum dots
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.

## Claims

### Claim 1

A semiconductor light emitting diode comprising:
a light emitting layer that emits light;
a hole injection layer formed on the light emitting layer;
an electron injection layer formed on the light emitting layer to face the hole injection layer;
a metal layer that comprises a metal nano dot, formed on the electron injection layer, and
a transparent conductive electrode formed on the metal layer.

### Claim 2 (depends on 1)

The semiconductor light emitting diode of claim 1, wherein the light emitting layer comprises amorphous silicon nitride that comprises a silicon nano dot.

### Claim 3 (depends on 1)

The semiconductor light emitting diode of claim 1, wherein the electron injection layer comprises an n-type SiC material.

### Claim 4 (depends on 3)

The semiconductor light emitting diode of claim 3, wherein the n-type SiC material is SiC or SiCN.

### Claim 5 (depends on 1)

The semiconductor light emitting diode of claim 1, wherein the metal layer comprises at least one nano dot selected from the group consisting of Au, Ag, Mg, Al, Ni, Co, In, Cu, Pt, and Ti.

### Claim 6 (depends on 1)

The semiconductor light emitting diode of claim 1, wherein the transparent conductive electrode comprises at least one material selected from the group consisting of ITO, SnO2, In2O3, Cd2SnO4, and ZnO.

### Claim 7

A method of manufacturing a semiconductor light emitting diode, the method comprising:
forming an electron injection layer on a light emitting layer that emits light;
forming a metal layer on the electron injection layer;
forming a transparent conductive electrode on the metal layer; and
heat treating the metal layer to comprise a metal nano dot in the metal layer.

### Claim 8 (depends on 7)

The method of claim 7, further comprising forming a hole injection layer on the light emitting layer to face the electron injection layer.

### Claim 9 (depends on 7)

The method of claim 7, wherein the light emitting layer is an amorphous silicon nitride that comprises a silicon nano dot.

### Claim 10 (depends on 7)

The method of claim 7, wherein the electron injection layer is formed on the light emitting layer by depositing an n-type SiC material on the light emitting layer.

### Claim 11 (depends on 7)

The method of claim 7, wherein the metal layer is formed on the electron injection layer by depositing a metal that comprises at least one metal selected from the group consisting of Au, Ag, Mg, Al, Ni, Co, In, Cu, Pt, and Ti.

### Claim 12 (depends on 7)

The method of claim 7, wherein the heat treatment is performed at a temperature in a range of room temperature to 1000° C.

### Claim 13 (depends on 12)

The method of claim 12, wherein the heat treatment is performed for 10 seconds to 1 hour.