# US 7,608,852 B2 · Luminous device and method of manufacturing the same

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- Number: US 7,608,852 B2
- Document ID: US7608852B2
- Status: Granted
- Kind: B2
- Application number: 12/005,365
- Filed: 2007-12-27
- Published: 2009-01-08
- Granted: 2009-10-27
- Earliest claimed: 2007-07-03
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Ki-ha Hong; Sung-hoon Lee; Jong-seob Kim; Jai-kwang Shin
- Web page: https://patentgrep.com/patent/US7608852B2

## CPC

- H10H 20/826: comprising only Group IV materials
- Y10S 977/762: Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire.

## Claims

### Claim 1

A luminous device, comprising:
a light emitting layer; and
a first electrode and a second electrode each connected to the light emitting layer, wherein the light emitting layer is a strained nanowire and the strained nanowire has a lattice constant that increases in a lengthwise direction thereof compared to a non-strained nanowire.

### Claim 2 (depends on 1)

The luminous device of claim 1, wherein the strained nanowire is a silicon (Si) layer.

### Claim 3 (depends on 1)

The luminous device of claim 1, wherein the strained nanowire includes a p-type dopant region and an n-type dopant region.

### Claim 4 (depends on 1)

The luminous device of claim 1, wherein the strained nanowire is un-doped.

### Claim 5 (depends on 1)

The luminous device of claim 1, further comprising:
a p-type semiconductor layer between the first electrode and the strained nanowire, and
an n-type semiconductor layer between the second electrode and the strained nanowire.

### Claim 6 (depends on 5)

The luminous device of claim 5, wherein the p-type semiconductor layer and the n-type semiconductor layer are separated from each other on a substrate, the strained nanowire is formed between the p-type semiconductor layer and the n-type semiconductor layer, and the strained nanowire is parallel to the substrate.

### Claim 7 (depends on 6)

The luminous device of claim 6, wherein the strained nanowire is separated from the substrate.

### Claim 8 (depends on 7)

The luminous device of claim 7, further comprising an insulating layer filling a space between the strained nanowire and the substrate.

### Claim 9 (depends on 8)

The luminous device of claim 8, further comprising a stress control layer between the insulating layer, the p-type semiconductor layer, the n-type semiconductor layer and the substrate.

### Claim 10 (depends on 9)

The luminous device of claim 9, wherein the stress control layer has a lattice constant greater than that of the p-type semiconductor layer, the n-type semiconductor layer and the strained nanowire.

### Claim 11 (depends on 10)

The luminous device of claim 10, wherein the p-type semiconductor layer, the n-type semiconductor layer and the strained nanowire are silicon (Si) layers, and the stress control layer is a silicon nitride layer.

### Claim 12 (depends on 6)

The luminous device of claim 6, wherein an upper portion of the substrate has a lattice constant greater than that of the p-type semiconductor layer, the n-type semiconductor layer and the strained nanowire.

### Claim 13 (depends on 12)

The luminous device of claim 12, wherein the p-type semiconductor layer, the n-type semiconductor layer and the strained nanowire are silicon (Si) layers, and
the upper portion of the substrate is formed of germanium (Ge) or silicon germanium (SiGe).

### Claim 14 (depends on 1)

The luminous device of claim 1, wherein the first electrode, the strained nanowire and the second electrode are sequentially and vertically stacked.

### Claim 15 (depends on 14)

The luminous device of claim 14, wherein the strained nanowire is divided into an upper part and a lower part, wherein the lower part is a first conductive type dopant region and the upper part is a second conductive type dopant region.

### Claim 16 (depends on 14)

The luminous device of claim 14, wherein the strained nanowire is divided into a lower part, a middle part and an upper part, wherein the lower part is a first conductive type dopant region, the middle part is un-doped region and the upper part is a second conductive type dopant region.

### Claim 17 (depends on 14)

The luminous device of claim 14, further comprising an insulating layer between the first and second electrodes, wherein at least a portion of the strained nanowire is covered by the insulating layer.