# US 7,608,833 B2 · Radiation image detector

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- Number: US 7,608,833 B2
- Document ID: US7608833B2
- Status: Granted
- Kind: B2
- Application number: 12/240,299
- Filed: 2008-09-29
- Published: 2009-04-02
- Granted: 2009-10-27
- Earliest claimed: 2007-09-28
- Assignees: FUJIFILM Corporation
- Inventors: Kaku Irisawa; Fumito Nariyuki; Kenichi Hayashi
- Web page: https://patentgrep.com/patent/US7608833B2

## CPC

- G01T 1/244: {Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like}
- G01T 1/246: {utilizing latent read-out, e.g. charge stored and read-out later}
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)

## Abstract

A voltage applying electrode, to which a voltage is to be applied, a semiconductor layer, which is capable of generating electric charges when radiation is irradiated to the semiconductor layer, and an electrode for detecting an electric signal in accordance with a radiation dose are overlaid one upon another. A hole injection blocking layer is located between the voltage applying electrode and the semiconductor layer. The hole injection blocking layer contains an alloy of SbxS100-x, where x represents a number satisfying the condition of 41≦x≦60.

## Claims

### Claim 1

A radiation image detector, comprising:
i) a voltage applying electrode, to which a voltage is to be applied,
ii) a semiconductor layer, which is capable of generating electric charges when radiation is irradiated to the semiconductor layer, and
iii) an electrode for detecting an electric signal in accordance with a radiation dose,
the voltage applying electrode, the semiconductor layer, and the electrode for detecting the electric signal being overlaid one upon another,
an image signal in accordance with the electric charges, which have been generated in the semiconductor layer, being read out from the radiation image detector,
wherein a hole injection blocking layer is located between the voltage applying electrode and the semiconductor layer, and
the hole injection blocking layer contains an alloy of SbxS100-x, where x represents a number satisfying the condition of 41≦x≦60.

### Claim 2 (depends on 1)

A radiation image detector as defined in claim 1 wherein a thickness of the hole injection blocking layer falls within the range of 0.25 μm to 3 μm.

### Claim 3 (depends on 1)

A radiation image detector as defined in claim 1 wherein a crystallization preventing layer that contains Se and As as principal constituents is located between the hole injection blocking layer and the semiconductor layer.

### Claim 4 (depends on 1)

A radiation image detector as defined in claim 1 wherein a concentration of the As constituent in the crystallization preventing layer falls within the range of 2% to 15%.

### Claim 5 (depends on 1)

A radiation image detector as defined in claim 1 wherein a negative voltage is applied to the voltage applying electrode at the time of the irradiation of the radiation, and
the voltage applying electrode is grounded at the time of the readout of the image signal from the radiation image detector.

### Claim 6 (depends on 1)

A radiation image detector as defined in claim 1 wherein a positive voltage is applied to the voltage applying electrode at the time of the irradiation of the radiation.