# US 7,608,545 B2 · Semiconductor device

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- Number: US 7,608,545 B2
- Document ID: US7608545B2
- Status: Granted
- Kind: B2
- Application number: 11/780,970
- Filed: 2007-07-20
- Published: 2008-01-31
- Granted: 2009-10-27
- Earliest claimed: 2006-07-24
- Assignees: Dongbu HiTek Co., Ltd.
- Inventors: Young-Je Yun
- Web page: https://patentgrep.com/patent/US7608545B2

## CPC

- H10P 50/73: {using masks for insulating materials}
- H10P 76/4088: {Processes for improving the resolution of the masks}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
performing a first exposure process to form a first photoresist on a semiconductor substrate at one side of an outside of a trench pattern to be formed;
performing a first dry etch of the semiconductor substrate using the first photoresist as a mask;
performing a second exposure process to form a second photoresist at an opposite side of the outside of the trench pattern, which is a side opposite to the first photoresist; and
performing a second dry etch of the semiconductor substrate using the second photoresist as a mask.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first and second dry etches are performed by a reactive ion etching (RIE) method.

### Claim 3 (depends on 2)

The method of claim 2, wherein the RIE method uses fluoride gas of CF4 as an etching gas.

### Claim 4 (depends on 3)

The method of claim 3, wherein CF4 is used as the etching gas and the semiconductor substrate is formed of an oxide film (SiO2).

### Claim 5 (depends on 2)

The method of claim 2, wherein the RIE method uses at least one of fluoride gas of CF4 and CHF3 as an etching gas.

### Claim 6 (depends on 5)

The method of claim 5, wherein the at least one of fluoride gas of CF4 and CHF3 is used as an etching gas and the semiconductor substrate is a low-k substrate.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first and second dry etches form a trench pattern of the semiconductor substrate.

### Claim 8

A method of manufacturing a semiconductor device, comprising:
performing a first exposure process to form at least one first photoresist on a semiconductor substrate;
performing a first dry etch of the semiconductor substrate using the at least one first photoresist as a mask to form a first trench pattern;
performing a second exposure process to form a second photoresist at a position spaced apart from an inner side surface of the first trench pattern by a predetermined distance; and
performing a second dry etch of the semiconductor substrate using the second photoresist as a mask to form a final trench pattern.

### Claim 9 (depends on 8)

The method of claim 8, wherein the predetermined distance of the second photoresist corresponds to a pitch of the final trench pattern.

### Claim 10 (depends on 8)

The method of claim 8, wherein the first and second dry etches are performed by a reactive ion etching (RIE) method.

### Claim 11 (depends on 10)

The method of claim 10, wherein the RIE method uses fluoride gas of CF4 as an etching gas.

### Claim 12 (depends on 11)

The method of claim 11, wherein fluoride gas of CF4 is used as the etching gas and the semiconductor substrate is formed of an oxide film (SiO2).

### Claim 13 (depends on 10)

The method of claim 10, wherein the RIE method uses at least one of a fluoride gas of CF4 and CHF3 as an etching gas.

### Claim 14 (depends on 13)

The method of claim 13, wherein at least one of the fluoride gas of CF4 and CHF3 is used as an etching gas and the semiconductor substrate is a low-dielectric substrate.

### Claim 15 (depends on 8)

The method of claim 8, wherein a pitch of the final trench pattern is approximately 10 nm when an exposure apparatus having an alignment precision of 3σ<10 nm is used.

### Claim 16 (depends on 8)

The method of claim 8, wherein the at least one first photoresist is formed to be spaced at a predetermined interval.