# US 7,608,543 B2 · Method for planarizing thin layer of semiconductor device

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- Number: US 7,608,543 B2
- Document ID: US7608543B2
- Status: Granted
- Kind: B2
- Application number: 11/618,669
- Filed: 2006-12-29
- Published: 2008-01-03
- Granted: 2009-10-27
- Earliest claimed: 2006-06-30
- Assignees: Hynix Semiconductor Inc.
- Inventors: Jae Gon Choi
- Web page: https://patentgrep.com/patent/US7608543B2

## CPC

- H10P 95/062: {involving a dielectric removal step}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely proportional to a thickness distribution of the HDP oxide layer. A chemical mechanical polishing process is performed on the HDP oxide layer.

## Claims

### Claim 1

A method for planarizing a layer of a semiconductor device, the method comprising:
forming a target layer over a substrate having first and second regions to have a reflective index distribution, wherein a first portion of the target layer deposited on the first region is provided with a first reflective index and a second portion of the target layer deposited on the second region is provided with a second reflective index, wherein first region is different from second region and a first reflective index is different from a second reflective index; and
performing the chemical mechanical polishing (CMP) process to planarize the target layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the target layer is deposited over the first and second regions of the substrate with the reflective index distribution to compensate for a non-uniformity in the deposition thickness of the target layer over the first and second regions, and
wherein the target layer is thicker at the first region than at the second region, and the first reflective index is higher than the second reflective index.

### Claim 3 (depends on 2)

The method of claim 2, wherein the target layer is deposited over the first and second regions of the substrate with the reflective index distribution to compensate for differences in removal rates of the CMP process at the first and second regions of the substrate.

### Claim 4 (depends on 1)

The method of claim 1, wherein the reflective index distribution of the target layer is based on a thickness distribution of a test layer.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
determining a relationship between a reflective index of the target layer to be deposited on the substrate and a removal rate of a chemical mechanical polishing process for the target layer;
depositing a test layer on another substrate, the target layer and the test layer being of the same material;
measuring a thickness distribution of the test layer, the thickness distribution of the test layer being used to represent a thickness distribution of the target layer; and
obtaining the reflective index distribution from the relationship that would compensate the thickness distribution of the target layer.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the target layer comprises a silicon oxide layer deposited using a high density plasma deposition (HDP) process.

### Claim 7 (depends on 6)

The method according to claim 6, wherein a removal rate of the chemical mechanical polishing process for the HDP oxide layer increases corresponding to increase in a reflective index of the HDP oxide layer.

### Claim 8 (depends on 7)

The method according to claim 7, wherein the HDP oxide layer has a higher reflective index at a location of where the HDP oxide layer is deposited to a greater thickness, and a lower reflective index at a location where the HDP oxide layer is deposited at a lower thickness.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the depositing of the HDP oxide layer comprises:
adjusting a supply flow rate of a reaction gas in such a way to increase a supply flow rate of the reaction gas onto the first region, and decrease the supply flow rate of the reaction gas onto the second region, the first reflective index of the first region being higher than the second reflective index of the second region.

### Claim 10 (depends on 9)

The method according to claim 9, wherein the depositing of the HDP oxide layer comprise:
positioning a reaction gas supply nozzle f above and proximate to the first region.

### Claim 11 (depends on 1)

The method according to claim 1, wherein the target layer is deposited over the substrate to have the reflective index distribution to be in the range of about 1.4˜1.6.

### Claim 12

A method for planarizing a layer of a semiconductor device, the method comprising:
depositing a high density plasma deposition (HDP) oxide layer over a wafer to have a lower reflective index at a central region of the wafer than that at a peripheral region; and
performing a chemical mechanical polishing process on the HDP oxide layer,
wherein the HDP oxide layer has a greater thickness at the peripheral region than at the central region.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the depositing of the HDP oxide layer comprises:
supplying a reaction gas for the HDP oxide layer such that a supply flow rate of the reaction gas is lower at the central region of the wafer than at the peripheral region.

### Claim 14 (depends on 12)

The method according to claim 12, wherein the depositing of the HDP oxide layer comprises:
positioning a reaction gas supply nozzle for supplying a reaction gas for the oxide layer proximate to the peripheral region.

### Claim 15 (depends on 12)

The method according to claim 12, wherein the HDP oxide layer is deposited on the wafer to have a reflective index distribution between about 1.4˜1.6 for the central region and the peripheral region of the wafer.

### Claim 16

A method for planarizing a layer of a semiconductor device, the method comprising:
depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inverse proportional to a thickness distribution of the HDP oxide layer; and
performing a chemical mechanical polishing process on the HDP oxide layer.

### Claim 17 (depends on 16)

The method according to claim 16, wherein the depositing of the HDP oxide layer comprises:
supplying a reaction gas for the HDP oxide layer such that a supply flow rate of the reaction gas is less at a central region of the wafer than at of the peripheral region of the wafer.