# US 7,608,541 B2 · Method of forming fine pattern, liquid crystal display device having a fine pattern and fabricating method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,541 B2 - Document ID: US7608541B2 - Status: Granted - Kind: B2 - Application number: 11/451,482 - Filed: 2006-06-13 - Published: 2007-01-04 - Granted: 2009-10-27 - Earliest claimed: 2005-06-30 - Assignees: LG Display Co., Ltd. - Inventors: Soon Sung Yoo; Heung Lyul Cho - Web page: https://patentgrep.com/patent/US7608541B2 ## CPC - G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making} - G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]} - G03F 7/40: Treatment after imagewise removal, e.g. baking - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method of forming fine pattern includes providing a film, forming a photo-resist pattern on the film, ashing the photo-resist pattern and patterning the film by using the ashed photo-resist pattern as a mask. ## Claims ### Claim 1 A method of forming a fine pattern, comprising: providing a film; forming a photo-resist pattern on the film; ashing the photo-resist pattern, wherein the ashing process is performed under O2 and at least one of SF6 and CF4 gas environment; and patterning the film by using the ashed photo-resist pattern as a mask. ### Claim 2 (depends on 1) The method as claimed in claim 1, wherein the photo-resist pattern has a step pattern. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein the photo-resist pattern includes a first region and a second region having a thickness thinner than the first region. ### Claim 4 (depends on 1) The method as claimed in claim 1, wherein the ashing the photo-resist pattern includes reducing a line width and a thickness of the first region, and removing the second region. ### Claim 5 (depends on 4) The method as claimed in claim 4, wherein the line width of the ashed first region includes a uniform width by removing the second region of the photo-resist pattern and adjusting a condition of the ashing process. ### Claim 6 (depends on 1) The method as claimed in claim 1, wherein the forming the photo-resist pattern includes an exposing process adjusting an exposure time such that the photo-resist pattern remains in an exposed area. ### Claim 7 (depends on 1) The method as claimed in claim 1, wherein the photo-resist pattern includes a step region and a flat region. ### Claim 8 (depends on 7) The method as claimed in claim 7, wherein the step region is shielded during the exposing process and the flat region is exposed during the exposure process. ### Claim 9 (depends on 1) The method as claimed in claim 1, wherein the ashing process is performed by using plasma. ### Claim 10 (depends on 1) The method as claimed in claim 1, wherein the fine pattern has a line width of approximately 0.5˜2 μm. ### Claim 11 A method of forming a fine pattern, comprising: forming a photo-resist pattern using a mask to form a first pattern having a first line width corresponding to an exposure resolution of the mask; ashing the photo-resist pattern to have a second pattern with a second line width narrower than the first line width, wherein the ashing process is performed by O2 and at least one of SF6 and CF4 gas environment; and patterning a film by using the ashed photo-resist pattern as a mask to form a third pattern with a third line width narrower than the second line width. ### Claim 12 (depends on 11) The method as claimed in claim 11, wherein the photo-resist pattern has a step pattern. ### Claim 13 (depends on 11) The method as claimed in claim 11, wherein the photo-resist pattern includes a first region and a second region having a thickness thinner than the first region. ### Claim 14 (depends on 13) The method as claimed in claim 13, wherein ashing the photo-resist pattern includes reducing a line width and a thickness of the first region, and removing the second region. ### Claim 15 (depends on 13) The method as claimed in claim 13, wherein the line width of the ashed first region includes a uniform width by removing the second region of the photo-resist pattern and adjusting a condition of the ashing process. ### Claim 16 (depends on 11) The method as claimed in claim 11, wherein the forming the photo-resist pattern includes an exposing process adjusting an exposure time such that the photo-resist pattern remains in an exposed area. ### Claim 17 (depends on 11) The method as claimed in claim 11, wherein the photo-resist pattern includes a step region and a flat region. ### Claim 18 (depends on 17) The method as claimed in claim 17, wherein the step region is shielded during the exposing process and the flat region is exposed during the exposure process. ### Claim 19 (depends on 11) The method as claimed in claim 11, wherein the ashing process is performed by using plasma. ### Claim 20 (depends on 11) The method as claimed in claim 11, wherein the fine pattern has a line width of approximately 0.5˜2 μm. ### Claim 21 A method of fabricating at least one portion of the pixel electrode and the common electrode on a substrate for a liquid crystal display device comprising: forming a conductive layer; forming a photo-resist pattern using a mask to form a first pattern having a first line width corresponding to an exposure resolution of the mask; ashing the photo-resist pattern, wherein the ashing process is performed under O2 and at least one of SF6 and CF4 gas environment; and patterning the conductive layer using the ashed photo-resist pattern as a mask to form the one portion having a second line width narrower than the first line width. ### Claim 22 (depends on 21) The method as claimed in claim 21, wherein the photo-resist pattern has a step pattern. ### Claim 23 (depends on 21) The method as claimed in claim 21, wherein the photo-resist pattern includes a first region and a second region having a thickness thinner than the first region. ### Claim 24 (depends on 23) The method as claimed in claim 23, wherein ashing the photo-resist pattern includes reducing a line width and a thickness of the first region, and removing the second region. ### Claim 25 (depends on 24) The method as claimed in claim 24, wherein the line width of the ashed first region includes a uniform width by removing the second region of the photo-resist pattern and adjusting a condition of the ashing process. ### Claim 26 (depends on 21) The method as claimed in claim 21, wherein the forming the photo-resist pattern includes an exposing process adjusting an exposure time such that the photo-resist pattern remains in an exposed area. ### Claim 27 (depends on 21) The method as claimed in claim 21, wherein the photo-resist pattern includes a step region and a flat region. ### Claim 28 (depends on 27) The method as claimed in claim 27, wherein the step region is shielded during the exposing process the flat region is exposed during the exposure process. ### Claim 29 (depends on 21) The method as claimed in claim 21, wherein the ashing process is performed by using plasma. ### Claim 30 (depends on 21) The method as claimed in claim 21, wherein the one portion has a line width of approximately 0.5˜2 μm. ### Claim 31 (depends on 21) The method as claimed in claim 21, wherein the one portion has a line width of approximately 1 μm. ### Claim 32 (depends on 21) The method as claimed in claim 21, wherein the one portion is a finger portion of the at least electrode.