# US 7,608,540 B2 · Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,540 B2 - Document ID: US7608540B2 - Status: Granted - Kind: B2 - Application number: 11/406,243 - Filed: 2006-04-19 - Published: 2006-12-21 - Granted: 2009-10-27 - Earliest claimed: 2005-06-15 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Jung-Dae Park; Pil-Kwon Jun; Myoung-Ok Han; Se-Yeon Kim; Kwang-Shin Lim; Tae-Hyo Choi; Seung-Ki Chae; Yang-Koo Lee - Web page: https://patentgrep.com/patent/US7608540B2 ## CPC - C11D 7/5013: {containing nitrogen} - C11D 7/263: {Ethers} - C11D 7/266: {Esters or carbonates} - C11D 7/3263: {Amides or imides} - C11D 7/3272: {Urea, guanidine or derivatives thereof} - C11D 7/3281: {Heterocyclic compounds} - C11D 7/34: containing sulfur - C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors - C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL ## Abstract A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: forming a layer on a substrate; forming a photoresist pattern on the layer, the photoresist pattern exposing a portion of the layer; and removing the photoresist pattern from the substrate by applying a composition which includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and water, wherein the alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group. ### Claim 2 (depends on 1) The method of claim 1, wherein the composition comprises about 0.1 to about 1 percent by weight of an alkylammonium fluoride salt as the additive based on a total weight of the composition. ### Claim 3 (depends on 1) The method of claim 1, wherein the composition comprises about 1 to about 6 percent by weight of a corrosion-inhibiting agent as the additive based on a total weight of the composition. ### Claim 4 (depends on 1) The method of claim 1, wherein the composition further comprises about 1 to about 30 percent by weight of hydroxylamine, an alkanolamine compound or a mixture thereof. ### Claim 5 (depends on 1) The method of claim 1, wherein the layer comprises a metal film, an insulation film or a combination thereof. ### Claim 6 (depends on 1) The method of claim 1, further comprising etching the layer using the photoresist pattern as an etching mask. ### Claim 7 (depends on 6) The method of claim 6, wherein the layer is etched using plasma. ### Claim 8 (depends on 1) The method of claim 1, further comprising removing etching residues generated in an etching process from the substrate, while simultaneously removing the photoresist pattern from the substrate. ### Claim 9 (depends on 8) The method of claim 8, wherein the etching residues comprise an organic polymer, an oxide polymer, a metallic polymer or a combination thereof. ### Claim 10 (depends on 1) The method of claim 1, further comprising rinsing the substrate, and drying the substrate. ### Claim 11 (depends on 1) The method of claim 1, wherein the alcoholamide compound comprises at least one selected from the group consisting of 4-hydroxy-N-(2-hydroxyethyl)butyramide, 4-hydroxy-N,N-bis(2-hydroxyethyl) butyramide, 4-hydroxy-N,N-bis(2-hydroxypropyl)butyramide and N,4-dihydroxy butyramide. ### Claim 12 (depends on 11) The method of claim 11, wherein the alcoholamide compound comprises 4-hydroxy-N-(2-hydroxyethyl)butyramide. ### Claim 13 (depends on 1) The method of claim 1, wherein the polar aprotic solvent comprises at least one selected from the group consisting of propylene glycol methyl ether, propylene glycol methyl ether acetate, ethylene glycol methyl ether, ethylene glycol methyl ether acetate, ethyl lactate, γ-butyrolactone, ethyl 3-ethoxypropionate, N-methyl-2-pyrrolidinone, dimethylformamide, dimethylacetamide, diethylacetamide, dimethylsulfoxide, acetonitrile, carbitol acetate, dimethyl adipate and sulfolane. ### Claim 14 (depends on 2) The method of claim 2, wherein the alkylammonium fluoride salt comprises at least one selected from the group consisting of tetramethylanimonium fluoride, tetraethylanimonium fluoride, tetrapropylammonium fluoride and tetrabutylammonium fluoride. ### Claim 15 (depends on 3) The method of claim 3, wherein the corrosion-inhibiting agent comprises catechol, ethanesulfonic acid or a mixture thereof. ### Claim 16 (depends on 1) The method of claim 1, wherein at least one of R1 and R2 is a hydroxyalkyl group, and wherein the hydroxyalkyl group of the at least one of R1 and R2 independently comprises any one selected from the group consisting of hydroxymethyl group, hydroxyethyl group, hydroxypropyl group, hydroxyisopropyl group and hydroxybutyl group. ### Claim 17 (depends on 4) The method of claim 4, wherein the composition comprises the alkanolamine compound, and wherein the alkanolamine compound comprises at least one selected from the group consisting of monoethanolamine, diethanolamine, diisopropanolamine and n-butanolamine. ### Claim 18 A method of manufacturing a semiconductor device, comprising: forming a layer on a substrate; forming a photoresist pattern on the layer, the photoresist pattern exposing a portion of the layer; etching the layer using the photoresist pattern as an etching mask to form a layer pattern on the substrate; and removing the photoresist pattern and etching residues from the substrate and the layer pattern by applying a composition which includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and water, wherein the alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.