# US 7,608,534 B2 · Interconnection of through-wafer vias using bridge structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,534 B2 - Document ID: US7608534B2 - Status: Granted - Kind: B2 - Application number: 11/043,580 - Filed: 2005-01-26 - Published: 2006-07-27 - Granted: 2009-10-27 - Earliest claimed: 2004-06-02 - Assignees: Analog Devices, Inc. - Inventors: Changhan Yun; Javier Villarreal; Maurice S. Karpman - Web page: https://patentgrep.com/patent/US7608534B2 ## CPC - B81C 1/00301: {Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias} - H10W 76/15: Containers comprising an insulating or insulated base - H10W 95/00: Packaging processes not covered by the other groups of this subclass - B81B 2207/095: through the lid - B81C 2203/0118: Bonding a wafer on the substrate, i.e. where the cap consists of another wafer - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract Bridge structures provide a surface on which to form interconnections to components through through-hole vias. The bridge structures at least partially, and preferably fully, span the gap between two wafers, and, more specifically, between a through-hole via in one wafer and a corresponding component on the other wafer. Bridge structure may be formed on the wafer having the through-hole via and/or the wafer having the component. ## Claims ### Claim 1 A method for forming an interconnection in a capped or stacked wafer device, the method comprising: forming a bridge structure on a first wafer device; bonding the first wafer device to a second wafer device such that the bridge structure at least partially spans a gap between a through-hole via in one of the wafers and a corresponding component on the other wafer; and forming an interconnection to the component through the through-hole via across the bridge structure. ### Claim 2 (depends on 1) A method according to claim 1, wherein the bridge structure is formed on the wafer having the through-hole via. ### Claim 3 (depends on 1) A method according to claim 1, wherein the bridge structure is formed on the wafer having the component. ### Claim 4 (depends on 1) A method according to claim 1, wherein the bridge structure spans the entire gap between the wafers. ### Claim 5 (depends on 1) A method according to claim 1, wherein the bridge structure forms a contiguous surface between the through-hole via and the component on which to form the interconnection. ### Claim 6 (depends on 1) A method according to claim 1, wherein the bridge structure juts out into a path between the through-hole via and the component. ### Claim 7 (depends on 1) A method according to claim 1, wherein forming the bridge structure comprises: forming the bridge structure on the first wafer using a material deposition process. ### Claim 8 (depends on 1) A method according to claim 1, wherein forming the bridge structure comprises: depositing a bridge structure material layer on the first wafer; and etching the bridge structure from the bridge structure material layer. ### Claim 9 (depends on 8) A method according to claim 8, wherein the first wafer includes the through-hole via, and wherein the method further comprises: exposing the through-hole via through the bridge structure material layer. ### Claim 10 (depends on 1) A method according to claim 1, wherein forming the interconnection comprises: depositing an interconnection material through the through-hole via onto the component and the bridge structure. ### Claim 11 (depends on 10) A method according to claim 10, wherein the interconnection material is deposited by a physical or chemical vapor deposition process. ### Claim 12 (depends on 1) A method according to claim 1, further comprising: removing the bridge structure after forming the interconnection. ### Claim 13 (depends on 1) A method according to claim 1, wherein the component is a bond pad. ### Claim 14 (depends on 1) A method according to claim 1, wherein the bridge structure is formed from a material used to bond the wafers. ### Claim 15 Apparatus comprising: a first wafer having a component; a second wafer bonded to the first wafer, the second wafer having a through-hole via; at least one bridge structure formed on one of the wafers, wherein the bridge structure at least partially spans a gap between the through-hole via and the component; and an interconnection formed through the through-hole via to the component across the bridge structure. ### Claim 16 (depends on 15) Apparatus according to claim 15, wherein the at least one bridge structure spans the entire gap between the wafers. ### Claim 17 (depends on 15) Apparatus according to claim 15, wherein the at least one bridge structure forms a contiguous surface between the through-hole via and the component on which the interconnection is formed. ### Claim 18 (depends on 15) Apparatus according to claim 15, wherein a bridge structure is formed on at least one of the first wafer and the second wafer. ### Claim 19 (depends on 15) Apparatus according to claim 15, wherein the at least one bridge structure is formed from a material used to bond the wafers. ### Claim 20 (depends on 15) Apparatus according to claim 15, wherein the at least one bridge structure juts out into a path between the through-hole via and the component.