# US 7,608,530 B2 · Hetero-crystalline structure and method of making same

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- Number: US 7,608,530 B2
- Document ID: US7608530B2
- Status: Granted
- Kind: B2
- Application number: 11/681,080
- Filed: 2007-03-01
- Published: 2008-09-04
- Granted: 2009-10-27
- Earliest claimed: 2007-03-01
- Assignees: Hewlett-Packard Development Company, L.P.
- Inventors: Nobuhiko Kobayashi; Shih Yuan Wang
- Web page: https://patentgrep.com/patent/US7608530B2

## CPC

- H10D 62/118: {Nanostructure semiconductor bodies}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 62/121: {oriented parallel to substrates}
- H10D 62/123: {comprising junctions}
- H10P 14/272: {using mask materials other than SiO2 or SiN}
- H10P 14/274: {using seed materials}
- H10P 14/279: {Vapour-liquid-solid growth}
- H10P 14/2901: {Materials}
- H10P 14/3462: {Nanowires}
- H10H 20/01: Manufacture or treatment
- H10H 20/818: within the light-emitting regions
- H10P 14/3461: {Nanoparticles}
- H10P 14/3464: {Nanotubes}
- Y10S 977/79: with heterogeneous nanostructures
- Y10S 977/825: Heterojunction formed between semiconductor materials that differ in that they belong to different periodic table groups
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.

## Claims

### Claim 1

A method of making a hetero-crystalline structure comprising:
forming a first layer of a non-single crystalline material on a substrate surface, the non-single crystalline material having short range atomic ordering; and
growing a nanostructure of a single-crystalline material on the first layer integral to a crystallite in the first layer, wherein the nanostructure is grown using catalyst-free epitaxial growth.

### Claim 2 (depends on 1)

The method of making of claim 1, wherein the non-single crystalline material of the first layer is non-insulator material.

### Claim 3 (depends on 1)

The method of making of claim 1, wherein the nanostructure is one of a nanowire and a nanodot.

### Claim 4 (depends on 1)

The method of making of claim 1, wherein growing a nanostructure comprises:
growing a single crystalline nanodot integral to the crystallite in the first layer using the catalyst-free epitaxial growth; and
epitaxially growing a single crystalline nanowire from the single crystalline nanodot.

### Claim 5 (depends on 1)

The method of making of claim 1, further comprising:
depositing a mask layer on a surface of the first layer; and
patterning the mask layer with a plurality of openings through the mask layer that exposes discrete portions of the first layer surface, some of the exposed discrete portions corresponding to portions of crystallites in the surface of the first layer,
wherein growing a nanostructure comprises growing the nanostructure in the opening integral to the exposed portion of the crystallite.

### Claim 6 (depends on 5)

The method of making of claim 5, wherein an opening of the plurality of openings is smaller in size than a size of the crystallite exposed by the opening.

### Claim 7 (depends on 5)

The method of making of claim 5, wherein growing the nanostructure in the opening comprises growing a single crystalline nanodot from the exposed portion of the crystallite using the catalyst-free epitaxial growth.

### Claim 8 (depends on 5)

The method of making of claim 5, wherein growing the nanostructure in the opening comprises growing a nanowire from the exposed portion of the crystallite using the catalyst-free epitaxial growth.

### Claim 9

A method of making a hetero-crystalline device structure comprising:
forming a first layer of a non-single crystalline material having short range atomic ordering;
depositing a mask layer on a surface of the first layer;
patterning the mask layer to expose a discrete portion of the first layer surface through an opening in the mask layer, the discrete portion corresponding to a crystallite in the first layer; and
growing a nanostructure of a single-crystalline material in the opening integral to a crystallite in the first layer using catalyst-free selective epitaxial growth.

### Claim 10 (depends on 9)

The method of making of claim 9, wherein the opening is smaller in size than a size of the crystallite exposed by the opening.

### Claim 11 (depends on 9)

The method of making of claim 9, wherein growing the nanostructure in the opening comprises growing a single crystalline nanodot.

### Claim 12 (depends on 11)

The method of making of claim 11, wherein growing the nanostructure in the opening further comprises growing a single crystalline nanowire from the single crystalline nanodot.

### Claim 13 (depends on 9)

The method of making of claim 9, wherein growing the nanostructure in the opening comprises growing a nanowire.

### Claim 14 (depends on 9)

The method of making of claim 9, wherein growing the nanostructure in the opening comprises controlling growth parameters to adjust a shape of the nanowire.

### Claim 15 (depends on 9)

The method of making of claim 9, further comprising growing a second layer of a non-single crystalline material on the mask layer such that the second layer is in contact with the nanostructure.