# US 7,608,529 B2 · Method for selective laser crystallization and display panel fabricated by using the same

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- Number: US 7,608,529 B2
- Document ID: US7608529B2
- Status: Granted
- Kind: B2
- Application number: 11/987,445
- Filed: 2007-11-30
- Published: 2008-04-17
- Granted: 2009-10-27
- Earliest claimed: 2004-12-10
- Assignees: Au Optronics Corporation
- Inventors: Tsung-Yi Hsu; Chih-Hsiung Chang
- Web page: https://patentgrep.com/patent/US7608529B2

## CPC

- H10P 14/3816: {Pulsed laser beam}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10D 86/0251: {characterised by increasing the uniformity of device parameters}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3456: {Polycrystalline}
- H10P 14/3814: {Continuous wave laser beam}
- H10P 14/382: {Scanning of a beam}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

## Claims

### Claim 1

A method for fabricating a display panel, comprising:
providing a substrate having a displaying region and a circuit driving region;
depositing an amorphous silicon layer on the substrate, and the amorphous silicon layer having a first amorphous silicon portion and a second amorphous silicon portion respectively associated to the displaying region and the circuit driving region;
crystallizing only the second amorphous silicon portion by a continuous wave laser beam to form a second polysilicon portion; and
crystallizing the first amorphous silicon portion excluding the second amorphous silicon portion to form a first polysilicon portion, wherein the crystallizing methods applied to the first amorphous silicon portion and the second amorphous silicon portion are different.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
forming an alignment mark on the amorphous silicon layer by photolithography.

### Claim 3 (depends on 1)

The method according to claim 1, wherein after the first and the second polysilicon portions are formed, the method further comprises:
forming a first transistor and a second transistor at the circuit driving region of the substrate; and
forming an electroluminescence component coupled to the second transistor.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the electroluminescence device is an organic light emitting diode.

### Claim 5 (depends on 3)

The method according to claim 3, wherein at least one of the first polysilicon portion and the second polysilicon portion is comprised of low-temperature polysilicon (LTPS).

### Claim 6 (depends on 1)

The method according to claim 1, wherein at least one of the first polysilicon portion and the second polysilicon portion is comprised of low-temperature polysilicon (LTPS).

### Claim 7 (depends on 1)

The method according to claim 1, wherein the step of crystallizing the first amorphous silicon portion to form the first polysilicon portion comprises crystallizing the first amorphous silicon portion by an excimer laser to form the first polysilicon portion.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the step of crystallizing the first amorphous silicon portion to form the first polysilicon portion comprises crystallizing the first amorphous silicon portion by a laser beam pulse to form the first polysilicon portion.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the step of crystallizing the first amorphous silicon portion to form the first polysilicon portion comprises crystallizing the first amorphous silicon portion by a continuous grain silicon (CGS) method, a sequential lateral solidification (SLS) method, excimer laser annealing (ELA) method or a metal induced lateral crystallization (MILC) method to form the first polysilicon portion.