# US 7,608,525 B2 · Method for manufacturing nitride semiconductor substrate

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- Number: US 7,608,525 B2
- Document ID: US7608525B2
- Status: Granted
- Kind: B2
- Application number: 11/525,906
- Filed: 2006-09-25
- Published: 2007-05-03
- Granted: 2009-10-27
- Earliest claimed: 2005-10-28
- Assignees: Nichia Corporation
- Inventors: Toru Takasone
- Web page: https://patentgrep.com/patent/US7608525B2

## CPC

- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2901: {Materials}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3242: {Structure}
- H10P 14/3258: {Crystal orientation}
- H10P 14/3416: {Nitrides}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing a nitride semiconductor substrate comprises the steps of: growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a pattern surrounded by a plane equivalent to the (11-20) plane and having at least two concave portions that are similar in their planar shape, and growing a second nitride semiconductor layer, using a plane equivalent to the (11-20) plane in the first nitride semiconductor pattern as a growth nucleus.

## Claims

### Claim 1

A nitride semiconductor substrate, comprising:
a first nitride semiconductor pattern surrounded by a plane equivalent to the (11-20) plane, having at least two concave portions that are similar in their planar shape, and formed on a substrate, and
a second nitride semiconductor layer formed on the first nitride semiconductor pattern.

### Claim 2

A nitride semiconductor substrate, comprising:
a first nitride semiconductor pattern formed on a substrate, and
a second nitride semiconductor layer formed on the first nitride semiconductor pattern,
wherein the first nitride semiconductor pattern is formed by a plurality of frames with a substantially regular triangular planar shape, regularly disposed so that adjacent frames share only their apexes.

### Claim 3 (depends on 1)

The nitride semiconductor substrate according to claim 1, wherein the first nitride semiconductor pattern includes a convex portion whose inner periphery and outer periphery are similar in their planar shape.

### Claim 4 (depends on 3)

The nitride semiconductor substrate according to claim 3, wherein the first nitride semiconductor pattern includes a convex portion whose inner periphery and outer periphery are substantially regular triangular planar shape.

### Claim 5 (depends on 2)

The a nitride semiconductor substrate according to claim 2, wherein each single frame in the first nitride semiconductor pattern is such that the inner periphery and outer periphery are substantially regular triangular in their planar shape.