# US 7,608,522 B2 · Method for fabricating a hybrid orientation substrate

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- Number: US 7,608,522 B2
- Document ID: US7608522B2
- Status: Granted
- Kind: B2
- Application number: 11/684,634
- Filed: 2007-03-11
- Published: 2008-09-11
- Granted: 2009-10-27
- Earliest claimed: 2007-03-11
- Assignees: United Microelectronics Corp.
- Inventors: Chien-Ting Lin; Che-Hua Hsu; Yao-Tsung Huang; Guang-Hwa Ma
- Web page: https://patentgrep.com/patent/US7608522B2

## CPC

- H10P 14/3822: {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}
- H10D 30/792: {comprising applied insulating layers, e.g. stress liners}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10P 90/1914: {using bonding}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3466: {Crystal orientation}
- H10P 14/36: {characterised by treatments done before the formation of the materials}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.

## Claims

### Claim 1

A method for fabricating a hybrid orientation substrate comprising steps of:
providing a direct silicon bonding (DSB) wafer having a first substrate with a first crystalline orientation and a second substrate with a second crystalline orientation directly bonded thereon;
forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer;
performing an amorphization process to transform the first region of the second substrate into an amorphized region; and
performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and simultaneously to make the second region stressed by the first blocking layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first blocking layer comprises silicon oxide, silicon nitride, or silicon oxynitride.

### Claim 3 (depends on 1)

The method of claim 1, wherein the amorphization process is performed by implanting dopants into the first region with the first blocking layer used as an implant mask.

### Claim 4 (depends on 3)

The method of claim 3, wherein the dopants comprise Si, Ge, Ar, C, O, N, H, He, Kr, Xe, P, B, As, or a mixture thereof.

### Claim 5 (depends on 3)

The method of claim 3, wherein the dopants are implanted to a depth beyond a bonded interface of the first substrate and the second substrate.

### Claim 6 (depends on 1)

The method of claim 1 further comprising a step of forming a second blocking layer on the first region and the first blocking layer before performing the annealing process.

### Claim 7 (depends on 6)

The method of claim 6, wherein the second blocking layer is patterned to expose the first blocking layer.

### Claim 8 (depends on 6)

The method of claim 6, wherein the first region is stressed by the second blocking layer.

### Claim 9 (depends on 1)

The method of claim 1, wherein the first crystalline orientation is (100) crystalline orientation and the second crystalline orientation is (110) crystalline orientation.

### Claim 10 (depends on 1)

The method of claim 1, wherein the first crystalline orientation is (110) crystalline orientation and the second crystalline orientation is (100) crystalline orientation.