# US 7,608,519 B2 · Method of fabricating trench isolation of semiconductor device

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- Number: US 7,608,519 B2
- Document ID: US7608519B2
- Status: Granted
- Kind: B2
- Application number: 11/498,667
- Filed: 2006-08-03
- Published: 2007-02-15
- Granted: 2009-10-27
- Earliest claimed: 2005-08-09
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Dong-suk Shin; Yong-kuk Jeong
- Web page: https://patentgrep.com/patent/US7608519B2

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- H10P 14/6506: {Formation of intermediate materials}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In a method of fabricating a trench isolation structure of a semiconductor device, excellent gap filling properties are attained, without the generation of defects. In one aspect, the method comprises: loading a substrate with a trench formed therein into a high-density plasma (HDP) chemical vapor deposition apparatus; primarily heating the substrate; applying a first bias power to the apparatus so as to form an HDP oxide liner on side wall and bottom surfaces of the trench, a gap remaining in the trench following formation of the HDP oxide liner; removing the application of the first bias power and secondarily heating the substrate; applying a second bias power at a power level that is greater than that of the first bias power to the substrate so as to form an HDP oxide film to fill the gap in the trench; and unloading the substrate from the apparatus.

## Claims

### Claim 1

A method of fabricating a trench isolation structure of a semiconductor device, comprising:
providing a substrate with a trench formed therein;
forming an oxide film on side wall and bottom surfaces of the trench;
forming a nitride liner on the oxide film on the side wall and bottom surfaces of the trench, and on top surfaces of the substrate;
loading the substrate into a high-density plasma (HDP) chemical vapor deposition apparatus;
primarily heating the substrate;
applying a first bias power to the apparatus so as to form an HDP oxide liner on an entire surface of the nitride liner, a gap remaining in the trench following formation of the HDP oxide liner;
removing the application of the first bias power and secondarily heating the substrate;
applying a second bias power at a power level that is greater than that of the first bias power to the substrate so as to form an HDP oxide film to fill the gap in the trench; and
unloading the substrate from the apparatus.

### Claim 2 (depends on 1)

The method of claim 1, wherein, in the primarily heating, the substrate is heated to a temperature in a range of about 300 to 400° C.

### Claim 3 (depends on 1)

The method of claim 1, wherein, in the forming of the HDP oxide liner, the substrate is heated to a temperature in a range of about 300 to 450° C.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first bias power is in a range of about 500 to 2000 W.

### Claim 5 (depends on 1)

The method of claim 1, wherein the forming of the HDP oxide liner is performed within a time period which corresponds to a range of about 1/200 to 1/10 amount of a time period for forming of the HDP oxide film.

### Claim 6 (depends on 1)

The method of claim 1, wherein the forming of the HDP oxide liner is performed for a time period ranging from about one to five seconds.

### Claim 7 (depends on 1)

The method of claim 1, wherein, in the forming of the HDP oxide liner, a He gas is used as a sputtering gas.

### Claim 8 (depends on 1)

The method of claim 1, wherein, in the secondarily heating, the substrate is heated to temperature in a range of about 400 to 600° C.

### Claim 9 (depends on 1)

The method of claim 1, wherein the secondarily heating is performed for a time period ranging from about 50 to 150 seconds.

### Claim 10 (depends on 1)

The method of claim 1, wherein, in the forming of the HDP oxide film, the substrate is at a temperature ranging from about 600 to 800° C.

### Claim 11 (depends on 1)

The method of claim 1, wherein the second bias power is in a range of about 3000 to 6000 W.

### Claim 12 (depends on 1)

The method of claim 1, wherein the forming of the HDP oxide film is performed for time period ranging from about 50 to 200 seconds.

### Claim 13 (depends on 1)

The method of claim 1, wherein, in the forming of the HDP oxide film, a H2 gas is used as a sputtering gas.

### Claim 14 (depends on 1)

The method of claim 1, wherein an oxide film and a nitride liner are sequentially formed on the side wall and bottom surfaces of the trench.

### Claim 15 (depends on 1)

The method of claim 1, wherein the substrate comprises:
a semiconductor base substrate;
a pad oxide layer on the semiconductor base substrate; and
a nitride layer on the pad oxide layer.

### Claim 16

A method of fabricating a trench isolation structure of a semiconductor device, comprising:
providing a substrate with a trench formed therein;
forming an oxide film on side wall and bottom surfaces of the trench;
forming a nitride liner on the oxide film on side wall and bottom surfaces of the trench, and on top surfaces of the substrate;
loading the substrate into a high-density plasma (HDP) chemical vapor deposition apparatus;
primarily heating the substrate;
forming a He HDP oxide liner on an entire surface of the nitride liner, a gap remaining in the trench following forming the He HDP oxide liner;
secondarily heating the substrate;
forming a H2 HDP oxide film to fill the gap in the trench; and
unloading the substrate from the apparatus.

### Claim 17 (depends on 16)

The method of claim 16, wherein, in the forming of the He HDP oxide liner, a first bias power is applied and, in the forming of the H2 HDP oxide film, a second bias power is applied at a power level that is greater than that of the first bias power.

### Claim 18 (depends on 17)

The method of claim 17, wherein the first bias power is in a range of about 500 to 2000 W.

### Claim 19 (depends on 17)

The method of claim 17, wherein the second bias power is in a range of about 3000 to 6000 W.

### Claim 20 (depends on 16)

The method of claim 16, wherein, in the primarily heating, the substrate is heated to a temperature in a range of about 300 to 400° C.

### Claim 21 (depends on 16)

The method of claim 16, wherein, in the forming of the He HDP oxide liner, the substrate is at a temperature in a range of about 300 to 450° C.

### Claim 22 (depends on 16)

The method of claim 16, wherein a time required for forming the He HDP oxide liner is in a range of about 1/200 to 1/10 an amount of time required for forming the H2 HDP oxide film.

### Claim 23 (depends on 16)

The method of claim 16, wherein the forming of the He HDP oxide liner is performed for a time period ranging from about one to five seconds.

### Claim 24 (depends on 16)

The method of claim 16, wherein, in the secondarily heating, the substrate is heated to a temperature ranging from about 400 to 600° C.

### Claim 25 (depends on 16)

The method of claim 16, wherein the secondarily heating is performed for a time period ranging from about 50 to 150 seconds.

### Claim 26 (depends on 16)

The method of claim 16, wherein, in the forming of the H2 HDP oxide film, the temperature of the substrate is in a range of about 600 to 800° C.

### Claim 27 (depends on 16)

The method of claim 16, wherein the forming of the H2 HDP oxide film is performed for a time period ranging from about 50 to 200 seconds.

### Claim 28 (depends on 16)

The method of claim 16, wherein an oxide film and a nitride liner are sequentially formed on the side wall and bottom surfaces of the trench.

### Claim 29 (depends on 16)

The method of claim 16, wherein the substrate comprises:
a semiconductor base substrate;
a pad oxide layer on the semiconductor base substrate; and
a nitride layer on the pad oxide layer.