# US 7,608,517 B2 · Method for forming capacitor of semiconductor device

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- Number: US 7,608,517 B2
- Document ID: US7608517B2
- Status: Granted
- Kind: B2
- Application number: 11/122,298
- Filed: 2005-05-04
- Published: 2006-06-01
- Granted: 2009-10-27
- Earliest claimed: 2004-11-29
- Assignees: Hynix Semiconductor Inc.
- Inventors: Kee Jeung Lee
- Web page: https://patentgrep.com/patent/US7608517B2

## CPC

- H10D 1/716: {having vertical extensions}
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/694: {comprising noble metals or noble metal oxides}
- H10D 1/712: {being rough surfaces, e.g. using hemispherical grains}
- H10P 70/273: {the processing being a delineation of conductive layers, e.g. by RIE}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69394: {the material containing titanium, e.g. TiO2}
- H10P 14/69397: {the material containing two or more metal elements}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps of: forming a storage electrode on a semiconductor substrate; forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode; and forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO.

## Claims

### Claim 1

A method for forming a capacitor of a semiconductor device, which comprises the steps of:
forming a storage electrode on a semiconductor substrate;
forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode;
forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO; and
wherein the dielectric layer of Ti(1-x)TbxO is formed through one of pulsed chemical vapor deposition and low pressure chemical vapor deposition using an organic metallic composition containing Ti as a precursor and using an organic metallic composition containing Tb as a precursor, wherein the organic metallic composition containing Ti and the organic metallic composition containing Tb are each used as precursors during the same pulsed chemical vapor deposition or low pressure chemical vapor deposition process, and
wherein the dielectric layer formed of Ti(1-x)TbxO is formed to have a mixed phase.

### Claim 2 (depends on 1)

A method according to claim 1, wherein the storage electrode is formed by using a metal selected from the group consisting of doped poly-silicon (poly-Si), TiN, TaN, W, WN, WSi, Ru, RuO2, Ir, IrO2, and Pt.

### Claim 3 (depends on 2)

A method according to claim 2, wherein the storage electrode is formed using doped poly-silicon, and a hemi-spherical grain is formed on a surface of the storage electrode.

### Claim 4 (depends on 1)

A method according to claim 1, wherein a washing process is performed between the steps forming the storage electrode and the dielectric layer.

### Claim 5 (depends on 4)

A method according to claim 4, wherein the washing process is performed by using an HF mixed solution including H2O and HF with a ratio of 10 to 100 for H2O/HF or including NH4F and HF with a ratio of 5 to 500 for NH4F/HF in order to remove a native oxide layer.

### Claim 6 (depends on 4)

A method according to claim 4, wherein, after HF washing process, an additional washing process is performed by using NH4OH mixed solution (NH4OH+H2O2+H2O) or H2SO4 mixed solution (H2SO4+H2O2, H2SO4+H2O).

### Claim 7 (depends on 3)

A method according to claim 3, wherein annealing is performed in an NH3 atmosphere to nitrify a surface of the storage electrode, and wherein annealing is performed in an NH3 atmosphere to nitrify a surface of the dielectric layer.

### Claim 8 (depends on 7)

A method according to claim 7, wherein the annealing is performed in a mixed gas of O2 and N2 mixed at a ratio less than 0.1 for O2/N2 at a temperature of 500 to 900° C. within a furnace under atmospheric pressure or vacuumed pressure with a flow rate of 1 to 10 slm or through a rapid heat-processing process.

### Claim 9 (depends on 1)

A method according to claim 1, wherein the dielectric layer uses Ti(OCH(CH3)2)4 which is a source gas having a Ti component as a precursor, and one selected from the group consisting of O3, O2, plasma O2, N2O, and plasma N2O or H2O of a density of 200±20 g/m3 is used as the reaction gas in order to form the Ti(1-x)TbxO dielectric layer.

### Claim 10 (depends on 9)

A method according to claim 9, wherein the reaction gas flows at a rate of 0.1 to 1 slm.

### Claim 11 (depends on 1)

A method according to claim 1, wherein the dielectric layer uses Tb(OC2H5)3 which is a source gas having a Tb component is used as a precursor, and one selected from the group consisting of O3, O2, plasma O2, N2O, and plasma N2O or H2O of a density of 200±20 g/m3 is used as the reaction gas in order to form the Ti(1-x)TbxO dielectric layer.

### Claim 12 (depends on 11)

A method according to claim 11, wherein the source gas flows at a rate of 50 to 500 sccm, and the reaction gas flows at a rate of 0.1 to 1 slm.

### Claim 13 (depends on 1)

A method according to claim 1, wherein the dielectric layer contains Tb of 3 to 15%.

### Claim 14 (depends on 1)

A method according to claim 1, wherein the plate electrode is formed by using a metal selected from the group consisting of doped poly-silicon (poly-Si), TiN, TaN, W, WN, WSi, Ru, RuO2, Ir, IrO2, and Pt.

### Claim 15 (depends on 1)

A method according to claim 1, wherein, in case that a metallic material is used as the material of the plate, a silicon nitride layer or a doped poly-silicon layer having a thickness of 200 to 100 Å is formed on an upper portion of the plate electrode as an absorbing layer or a protecting layer.

### Claim 16 (depends on 1)

A method according to claim 1, wherein the dielectric layer of Ti(1-x)TbxO is formed using Ti(OCH(CH3)2)4 which is a source gas having a Ti component as a precursor, Tb(OC2H5)3 which is a source gas having a Tb component is used as a precursor, and one selected from the group consisting of O3, O2, plasma O2, N2O, and plasma N2O or H2O of a density of 200±20 g/m3 as the reaction gas.