# US 7,608,502 B2 · Method for manufacturing semiconductor device

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- Number: US 7,608,502 B2
- Document ID: US7608502B2
- Status: Granted
- Kind: B2
- Application number: 11/206,777
- Filed: 2005-08-19
- Published: 2006-03-02
- Granted: 2009-10-27
- Earliest claimed: 2004-08-24
- Assignees: NEC Electronics Corporation
- Inventors: Tomohisa Iino; Naomi Fukumaki; Yoshitake Kato; Tomoe Yamamoto
- Web page: https://patentgrep.com/patent/US7608502B2

## CPC

- H10P 14/6939: {characterised by the metal}
- H10P 14/668: {the materials being characterised by the deposition precursor materials}
- H10B 12/033: {the capacitor extending over the transistor}
- H10D 1/716: {having vertical extensions}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas. The process for manufacturing a capacitor of the present invention includes obtaining a boundary temperature T (degree C.), at which an increase in a deposition rate for depositing the capacitor dielectric film as increasing the temperature is detected, on the basis of a correlation data of a deposition temperature in the atomic layer deposition employing the deposition gas with a deposition rate for depositing the capacitor dielectric film at the deposition temperature (S100 and S102); and depositing the capacitor dielectric film via the atomic layer deposition employing the deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.) (S104 to S112).

## Claims

### Claim 1

A method for manufacturing a semiconductor device including a capacitor by depositing a capacitor dielectric film of said capacitor via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas, comprising:
obtaining a boundary temperature T (degree C.), at which an increase in a deposition rate for depositing said capacitor dielectric film is detected with increase in a deposition temperature, on the basis of a correlation data of the deposition temperature in the atomic layer deposition employing said deposition gas with a deposition rate for depositing said capacitor dielectric film at the deposition temperature; and
depositing said capacitor dielectric film via the atomic layer deposition employing said deposition gas at a temperature within a range of from (T −20) (degree C.) to (T +20) (degree C.),
wherein the deposition temperature is 250° C.±40° C.

### Claim 2 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein said organic source material contains C and N.

### Claim 3 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein said organic source material contains a material presented by a general formula: M(NRR′)4
(where R and R′ are CxHy and M is a metallic element selected from the group consisting of Zr, Hf, La and Y).

### Claim 4 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein said capacitor contains a lower electrode composed of a metallic material, and in said depositing said capacitor dielectric film, said capacitor dielectric film is formed on said lower electrode.

### Claim 5 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein said depositing said capacitor dielectric film includes depositing said capacitor dielectric film by repeating a combination of introducing said deposition gas and introducing an oxidizing gas.

### Claim 6

A method for manufacturing a semiconductor device including a capacitor by depositing a capacitor dielectric film of said capacitor via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas, comprising:
obtaining a boundary temperature T (degree C.), at which an increase in a film thickness of said capacitor dielectric film formed in every cycle of the atomic layer deposition is detected with an increase in a deposition temperature, on the basis of a correlation data of the deposition temperature in the atomic layer deposition employing said deposition gas with a film thickness of said capacitor dielectric film formed in every cycle of the atomic layer deposition at the deposition temperature; and
depositing said capacitor dielectric film via the atomic layer deposition employing said deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.), wherein the deposition temperature is 250° C.±40° C.

### Claim 7 (depends on 6)

The method for manufacturing a semiconductor device according to claim 6, wherein said organic source material contains C and N.

### Claim 8 (depends on 6)

The method for manufacturing a semiconductor device according to claim 6, wherein said organic source material contains a material presented by a general formula: M(NRR′)4
(where R and R′ are CxHy and M is a metallic element selected from the group consisting of Zr, Hf, La and Y).

### Claim 9 (depends on 6)

The method for manufacturing a semiconductor device according to claim 6, wherein said capacitor contains a lower electrode composed of a metallic material, and in said depositing said capacitor dielectric film, said capacitor dielectric film is formed on said lower electrode.

### Claim 10 (depends on 6)

The method for manufacturing a semiconductor device according to claim 6, wherein said depositing said capacitor dielectric film includes depositing said capacitor dielectric film by repeating a combination of introducing said deposition gas and introducing an oxidizing gas.