# US 7,608,492 B2 · Method for manufacturing semiconductor device and heat treatment method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,492 B2 - Document ID: US7608492B2 - Status: Granted - Kind: B2 - Application number: 12/007,624 - Filed: 2008-01-14 - Published: 2008-05-29 - Granted: 2009-10-27 - Earliest claimed: 2002-09-20 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Toru Takayama; Shunpei Yamazaki; Tetsuji Yamaguchi - Web page: https://patentgrep.com/patent/US7608492B2 ## CPC - H10D 30/6719: {having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs} - H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate} - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions} - H10D 30/6723: {having light shields} - H10D 86/0227: {using structural arrangements to control crystal growth, e.g. placement of grain filters} - H10P 14/2921: {being crystalline insulating materials} - H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers} - H10P 14/3238: {being insulating materials} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/3806: {using crystallisation-enhancing elements} - H10P 14/3814: {Continuous wave laser beam} - H10P 14/3816: {Pulsed laser beam} - H10P 14/382: {Scanning of a beam} - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliability by using the same, to a transistor formed by laminating a semiconductor film or an insulating film over a glass substrate. A heat treatment that is necessary in a step of forming a thin film element by laminating a semiconductor film or an insulating film over a glass substrate is performed without thermally-damaging the substrate. For the purpose, a light-absorbing layer that can absorb pulsed light over a particular portion of the substrate in which the thin film element is formed is locally formed, and the heat treatment is performed. A semiconductor layer or an insulating layer is disposed between the light-absorbing layer and the substrate, and thus, the portion overlapping with the light-absorbing layer is selectively heated to high temperature and the heat treatment can be performed. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising: forming a semiconductor layer over a glass substrate; forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer; forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light; performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light to oxidize a silicon cluster mixed into the insulating layer; and patterning the light-absorbing layer after performing the heat treatment. ### Claim 2 (depends on 1) A method for manufacturing a semiconductor device according to claim 1 wherein the island-like light-absorbing layer comprises a material selected from the group consisting of molybdenum, tungsten, titanium, titanium nitride, tantalum nitride, tungsten nitride, tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide, chromium silicide, cobalt silicide, platinum silicide, and polycrystalline silicon doped with phosphorous or boron and wherein the island-like light-absorbing layer has a thickness of 10 nm to 100 nm. ### Claim 3 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the pulsed light is coherent light that has a pulse width of from 10 to 100 nanoseconds. ### Claim 4 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein the pulsed light is non-coherent light that has a pulse width of from 1 to 100 microseconds. ### Claim 5 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein a light source of the pulsed light is a pulsed laser oscillator. ### Claim 6 (depends on 1) A method for manufacturing a semiconductor device according to claim 1, wherein a light source of the pulsed light is a xenon flash lamp. ### Claim 7 A method for manufacturing a semiconductor device, comprising: forming a semiconductor layer over a glass substrate; forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer; forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light; performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light and by supplying oxygen to the insulating layer to oxidize a silicon cluster mixed into the insulating layer; and patterning the light-absorbing layer after performing the heat treatment. ### Claim 8 (depends on 7) A method for manufacturing a semiconductor device according to claim 7 wherein the island-like light-absorbing layer comprises a material selected from the group consisting of molybdenum, tungsten, titanium, titanium nitride, tantalum nitride, tungsten nitride, tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide, chromium silicide, cobalt silicide, platinum silicide, and polycrystalline silicon doped with phosphorous or boron and wherein the island-like light-absorbing layer has a thickness of 10 nm to 100 nm. ### Claim 9 (depends on 7) A method for manufacturing a semiconductor device according to claim 7, wherein the pulsed light is coherent light that has a pulse width of from 10 to 100 nanoseconds. ### Claim 10 (depends on 7) A method for manufacturing a semiconductor device according to claim 7, wherein the pulsed light is non-coherent light that has a pulse width of from 1 to 100 microseconds. ### Claim 11 (depends on 7) A method for manufacturing a semiconductor device according to claim 7, wherein a light source of the pulsed light is a pulsed laser oscillator. ### Claim 12 (depends on 7) A method for manufacturing a semiconductor device according to claim 7, wherein a light source of the pulsed light is a xenon flash lamp. ### Claim 13 A method for manufacturing a semiconductor device, comprising: forming a semiconductor layer over a glass substrate; forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer; forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light; performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light to nitride a silicon cluster mixed into the insulating layer; and patterning the light-absorbing layer after performing the heat treatment. ### Claim 14 (depends on 13) A method for manufacturing a semiconductor device according to claim 13 wherein the island-like light-absorbing layer comprises a material selected from the group consisting of molybdenum, tungsten, titanium, titanium nitride, tantalum nitride, tungsten nitride, tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide, chromium silicide, cobalt silicide, platinum silicide, and polycrystalline silicon doped with phosphorous or boron and wherein the island-like light-absorbing layer has a thickness of 10 nm to 100 nm. ### Claim 15 (depends on 13) A method for manufacturing a semiconductor device according to claim 13, wherein the pulsed light is coherent light that has a pulse width of from 10 to 100 nanoseconds. ### Claim 16 (depends on 13) A method for manufacturing a semiconductor device according to claim 13, wherein the pulsed light is non-coherent light that has a pulse width of from 1 to 100 microseconds. ### Claim 17 (depends on 13) A method for manufacturing a semiconductor device according to claim 13, wherein a light source of the pulsed light is a pulsed laser oscillator. ### Claim 18 (depends on 13) A method for manufacturing a semiconductor device according to claim 13, wherein a light source of the pulsed light is a xenon flash lamp. ### Claim 19 A method for manufacturing a semiconductor device, comprising: forming a semiconductor layer over a glass substrate; forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer; forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light; performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light and by supplying nitrogen to the insulating layer to nitride a silicon cluster mixed into the insulating layer; and patterning the light-absorbing layer after performing the heat treatment. ### Claim 20 (depends on 19) A method for manufacturing a semiconductor device according to claim 19 wherein the island-like light-absorbing layer comprises a material selected from the group consisting of molybdenum, tungsten, titanium, titanium nitride, tantalum nitride, tungsten nitride, tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide, chromium silicide, cobalt silicide, platinum silicide, and polycrystalline silicon doped with phosphorous or boron and wherein the island-like light-absorbing layer has a thickness of 10 nm to 100 nm. ### Claim 21 (depends on 19) A method for manufacturing a semiconductor device according to claim 19, wherein the pulsed light is coherent light that has a pulse width of from 10 to 100 nanoseconds. ### Claim 22 (depends on 19) A method for manufacturing a semiconductor device according to claim 19, wherein the pulsed light is non-coherent light that has a pulse width of from 1 to 100 microseconds. ### Claim 23 (depends on 19) A method for manufacturing a semiconductor device according to claim 19, wherein a light source of the pulsed light is a pulsed laser oscillator. ### Claim 24 (depends on 19) A method for manufacturing a semiconductor device according to claim 19, wherein a light source of the pulsed light is a xenon flash lamp.