# US 7,608,483 B2 · Method of machining wafer

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- Number: US 7,608,483 B2
- Document ID: US7608483B2
- Status: Granted
- Kind: B2
- Application number: 12/126,261
- Filed: 2008-05-23
- Published: 2008-12-11
- Granted: 2009-10-27
- Earliest claimed: 2007-06-05
- Assignees: Disco Corporation
- Inventors: Kazuma Sekiya
- Web page: https://patentgrep.com/patent/US7608483B2

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 72/0198: {batch processes}
- H10W 72/856: {Bump connectors and die-attach connectors (bumps embedded in underfills H10W74/15)}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of machining a wafer, wherein a wafer provided with devices each having a low dielectric constant insulating film (low-k film) stacked on the face side thereof is divided into the individual devices, the devices thus divided are mounted on a wiring board, and then a grindstone is brought into contact with each of the mounted devices from the side of a side surface of the devices, to grind the back side of the device by a desired amount. Since no vertical load is exerted on the low-k film, the low-k film can be prevented from being broken, and device quality is not lowered.

## Claims

### Claim 1

A method of machining a wafer, for dividing a wafer in which a plurality of devices each having a low dielectric constant insulating film stacked on the face side thereof are formed in the state of being demarcated by planned dividing lines, into the individual devices and for causing said wafer to have a desired thickness, said method comprising:
a dividing step for dividing said wafer into said individual devices;
a bonding step for bonding electrodes of said divided devices to electrodes of a wiring board and for filling a gap between said wiring board and each said bonded device with a resin for sealing; and
a device grinding step for holding on a chuck table of a grinding apparatus said wiring board with said devices bonded thereto, and moving said wiring board in a horizontal direction in such a manner that a grinding stone fixed at a predetermined height is brought into contact with each said device from the side of a side surface of said device to grind the back side of said device, thereby grinding said device by a desired amount, wherein said device grinding step includes a first grinding step for rough grinding each said device by using a rough grinding stone and a second grinding step for finish grinding each said device by using a finish grinding stone.