# US 7,608,476 B2 · Electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,476 B2 - Document ID: US7608476B2 - Status: Granted - Kind: B2 - Application number: 11/596,211 - Filed: 2005-05-16 - Published: 2007-10-04 - Granted: 2009-10-27 - Earliest claimed: 2004-05-14 - Assignees: Plastic Logic Limited - Inventors: Catherine Mary Ramsdale; Henning Sirringhaus; Timothy Allan Von Werne - Web page: https://patentgrep.com/patent/US7608476B2 ## CPC - H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - H10K 10/84: Ohmic electrodes, e.g. source or drain electrodes - H10K 71/13: using printing techniques, e.g. ink-jet printing or screen printing - H10K 10/468: {characterised by the gate dielectrics} - H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract A technique for high-resolution surface energy assisted patterning of semiconductor active layer islands on top of an array of predefined source-drain electrodes without requiring an additional process step for surface energy patterning. ## Claims ### Claim 1 A method of forming an electronic device including spaced apart bodies of electrically conductive material connected by a channel of semiconductive material, the method including the steps of: forming said spaced apart bodies of electrically conductive material on a substrate; and using said bodies to control the deposition of a liquid including said semiconductive material or a precursor thereto to form said semiconductive channel wherein said electrically conductive bodies are formed by depositing conductive material or a precursor thereto on the substrate, and then removing selected portions of the deposited conductive material or precursor thereto. ### Claim 2 (depends on 1) A method according to claim 1, wherein said semiconductive material is essentially absent from the region of the substrate surrounding said bodies of electrically conductive material except in said channel. ### Claim 3 (depends on 1) A method according to claim 1, using the surface wetting properties of said bodies with respect to those of the bare substrate to confine the deposition of said liquid. ### Claim 4 (depends on 3) A method according to claim 3, wherein the relative attractive properties of the surface of said electrically conductive bodies are used to confine said liquid to a region of said conductive bodies and said channel. ### Claim 5 (depends on 4) A method according to claim 4, wherein the surface of said bodies has a greater attraction for said liquid than the surface of the portion of the substrate in the space between said bodies. ### Claim 6 (depends on 3) A method according to claim 3, wherein the surface of said bodies has a lesser attraction for said liquid than the surface of the portion of the substrate in the space between said bodies. ### Claim 7 (depends on 1) A method as claimed in claim 1, wherein said semiconductive channel is formed across a spacing of less than 50 microns between said bodies. ### Claim 8 (depends on 7) A method as claimed in claim 7, wherein said semiconductive channel is formed across a spacing of less than 20 microns between said bodies. ### Claim 9 (depends on 1) A method according to claim 1, wherein said substrate including said conductive bodies is exposed to a surface modification treatment prior to the deposition of said liquid, which changes the relative wetting properties of the surface of said conductive bodies relative to that of the bare substrate, and defines a surface energy pattern on the substrate, which is then used to control the deposition of said liquid including said semiconductive material or a precursor thereto. ### Claim 10 (depends on 9) A method according to claim 9, wherein said surface modification treatment comprises exposing the substrate and said electrically conductive bodies to a material that reacts selectively with either the substrate or the said electrically conductive bodies or adheres selectively to either the substrate or said electrically conductive bodies. ### Claim 11 (depends on 9) A method according to claim 9, wherein the surface modification process includes exposing the substrate and said bodies to a plasma and/or immersing the substrate and said bodies into a bath of surface modification agent. ### Claim 12 (depends on 9) A method according to claim 9, wherein the surface modification step includes selectively increasing the attraction of the surface of said bodies for said liquid. ### Claim 13 (depends on 9) A method according to claim 9, wherein the surface modification step includes selectively decreasing the attraction of the surface of the substrate for said liquid. ### Claim 14 (depends on 9) A method according to claim 9, wherein the surface modification step includes selectively decreasing the attraction of the surface of said bodies for said liquid. ### Claim 15 (depends on 1) A method according to claim 1, wherein said liquid is substantially confined to an area defined by the outer edges of said bodies. ### Claim 16 (depends on 1) A method as claimed in claim 1, wherein the surface tension of said liquid is higher than 25 dyn/cm. ### Claim 17 (depends on 1) A method as claimed in claim 1, wherein the surface tension of said liquid is higher than 28 dyn/cm. ### Claim 18 (depends on 1) A method as claimed in claim 1, wherein the surface tension of said liquid is higher than 30 dyn/cm. ### Claim 19 (depends on 1) A method as claimed in claim 1, wherein the viscosity of said liquid is higher than 5 cP. ### Claim 20 (depends on 1) A method as claimed in claim 1, wherein the viscosity of said liquid is higher than 10 cP. ### Claim 21 (depends on 1) A method according to claim 1, further including the step of forming on the substrate at least one structure of said electrically conductive material in addition to said spaced apart bodies to assist the deposition of said liquid on the substrate in the space between said two electrically conductive bodies. ### Claim 22 (depends on 21) A method according to claim 21, wherein said liquid is substantially confined to an area defined by the outer edges of said bodies and said further structures. ### Claim 23 (depends on 21) A method according to claim 21, wherein said further structures do not function in the operation of the electronic device. ### Claim 24 (depends on 1) A method according to claim 1, wherein said electrically conductive bodies are formed on the substrate by a patterning step. ### Claim 25 (depends on 1) A method according to claim 1, wherein selected portions of the deposited conductive material are removed using a process of laser ablation. ### Claim 26 (depends on 25) A method according to claim 25, wherein selected portions of the deposited conductive material are removed using a process of photolithography. ### Claim 27 (depends on 1) A method according to claim 1, wherein the substrate includes a gate electrode and an overlying dielectric layer, and said electrically conductive bodies are formed on the overlying dielectric layer to define source and drain electrodes. ### Claim 28 (depends on 1) A method according to claim 1, further including the steps of: forming a dielectric layer on the semiconducting channel and forming a gate electrode on the dielectric layer to thereby define together with said electrically conductive bodies and said semiconductive channel a field-effect transistor. ### Claim 29 (depends on 1) An electronic device produced by a method according to claim 1. ### Claim 30 (depends on 29) An integrated circuit including a plurality of electronic devices according to claim 29. ### Claim 31 A method of forming an electronic device including spaced apart bodies of electrically conductive material connected by a channel of semiconductive material, the method including the steps of: forming said spaced apart bodies of electrically conductive material on a substrate; forming on the substrate at least one structure in addition to said spaced apart bodies of said electrically conductive material; and using said bodies to control the deposition of a liquid including said semiconductive material or a precursor thereto to form said semiconductive channel; wherein said at least one structure facilitates the deposition of said liquid on the substrate in the space between said two electrically conductive spaced-apart bodies. ### Claim 32 (depends on 31) A method according to claim 31, wherein said liquid is substantially confined to an area defined by the outer edges of said bodies and said further structures. ### Claim 33 (depends on 31) A method according to claim 31, wherein said further structures do not function in the operation of the electronic device.