# US 7,608,472 B2 · Light emitting element and method of making same

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- Number: US 7,608,472 B2
- Document ID: US7608472B2
- Status: Granted
- Kind: B2
- Application number: 11/982,580
- Filed: 2007-11-02
- Published: 2008-03-20
- Granted: 2009-10-27
- Earliest claimed: 2002-05-31
- Assignees: Koha Co., Ltd.
- Inventors: Noboru Ichinose; Kiyoshi Shimamura; Yukio Kaneko; Encarnacion Antonia Garcia Villora; Kazuo Aoki
- Web page: https://patentgrep.com/patent/US7608472B2

## CPC

- H10H 20/833: Transparent materials
- C30B 15/00: Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00)
- C30B 15/34: Edge-defined film-fed crystal-growth using dies or slits
- C30B 29/16: Oxides
- H10H 20/0133: {with a substrate not being Group III-V materials}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2923: {being conductive materials, e.g. metallic silicides}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10P 14/3431: {Selenides}
- H10P 14/3442: {N-type}
- H10P 14/3444: {P-type}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

## Claims

### Claim 1

A method of making a light emitting element, comprising the steps of:
growing a single crystal substrate including gallium as the major component by EFG (Edge-defined film Fed Growth) method where, in a high-temperature vessel of a controlled atmosphere, using a slit die that allows source material melt to be continually lifted above the slit die through the capillary phenomenon of a slit provided with the slit die and a crucible that accommodates the slit die and the source material melt, single crystal the cross section of which has the same shape as the top surface of the slit die is grown; and
growing compound semiconductor thin film on said substrate.

### Claim 2

A method of making a light emitting element, comprising the steps of:
providing single crystalline Ga2O3 system seed crystal and non-single crystalline Ga2O3 system material;
growing a single crystal substrate including gallium as the major component by FZ(Floating Zone) method where said Ga2O3 system seed crystal and Ga2O3 system material are contacted and heated such that said Ga2O3 system seed crystal and Ga2O3 system material are melted at the contacting portion, thereby crystallize said Ga2O3 system material; and
growing compound semiconductor thin film on said substrate.