# US 7,608,390 B2 · Top antireflective coating composition containing hydrophobic and acidic groups

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- Number: US 7,608,390 B2
- Document ID: US7608390B2
- Status: Granted
- Kind: B2
- Application number: 11/462,527
- Filed: 2006-08-04
- Published: 2008-02-07
- Granted: 2009-10-27
- Earliest claimed: 2006-08-04
- Assignees: International Business Machines Corporation
- Inventors: Mahmoud Khojasteh; Wu-Song Huang; Margaret C. Lawson; Kaushal S. Patel; Irene Popova; Pushkara R. Varanasi
- Web page: https://patentgrep.com/patent/US7608390B2

## CPC

- G03F 7/091: {characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement}
- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- Y10S 438/952: Utilizing antireflective layer
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

## Claims

### Claim 1

A method of forming a patterned layer on a substrate, the method comprising:
providing a substrate having a material layer on a surface thereof;
depositing a photoresist composition on the substrate to form a photoresist layer on the material;
applying a top antireflective coating and barrier layer material on the photoresist layer to form a top antireflective and barrier layer, said top antireflective coating and barrier layer material comprising a polymer selected from the group consisting of poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate); poly[2-acrylamido-2-methyl-1-propanesulfonic acid, 14,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate acrylate, (perfluorooctyl)propyl methacrylate]; poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, 5-methacryloyloxy-2,6-norbornanecarbo-gamma-lactone); poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, hydroxymethyladamantylmethacrylate); poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, lauryl methacrylate); poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, isobornyl methacrylate); poly(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, 3-bicyclo[3,3,0]octane methacrylate); poly[(2-acrylamido-2-methyl-1-propanesulfonic acid, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, methacyloxypropyltris(trimethylsiloxy)silane]; and poly(2-sulfoethylmethacrylate, 4,4,-ditrifluoromethyl-4-hydroxybutan-2-yl methacrylate, 4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-heptadecafluoro-2-hydroxyundecyl acrylate);
pattern-wise exposing the photoresist layer and the top antireflective and barrier layer to an imaging radiation;
removing the top antireflective and barrier layer and the exposed portions of the photoresist layer to form a patterned photoresist layer on the material layer; and
transferring the pattern in the photoresist layer to the material layer.