# US 7,608,385 B2 · Information recording medium and method for producing the same

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- Number: US 7,608,385 B2
- Document ID: US7608385B2
- Status: Granted
- Kind: B2
- Application number: 10/895,870
- Filed: 2004-07-21
- Published: 2005-01-27
- Granted: 2009-10-27
- Earliest claimed: 2003-07-24
- Assignees: Panasonic Corporation
- Inventors: Rie Kojima; Yukako Doi; Noboru Yamada
- Web page: https://patentgrep.com/patent/US7608385B2

## CPC

- G11B 7/2578: consisting essentially of inorganic materials
- G11B 7/252: of layers other than recording layers
- G11B 7/2531: comprising glass
- G11B 7/2533: comprising resins
- G11B 7/2534: polycarbonates [PC]
- G11B 7/256: of layers improving adhesion between layers
- G11B 7/259: based on silver
- G11B 2007/24308: {transition metal elements of group 11 (Cu, Ag, Au)}
- G11B 2007/24312: {group 14 elements (e.g. Si, Ge, Sn)}
- G11B 2007/24314: {group 15 elements (e.g. Sb, Bi)}
- G11B 2007/24316: {group 16 elements (i.e. chalcogenides, Se, Te)}
- G11B 2007/25706: {containing transition metal elements (Zn, Fe, Co, Ni, Pt)}
- G11B 2007/25708: {containing group 13 elements (B, Al, Ga)}
- G11B 2007/2571: {containing group 14 elements except carbon (Si, Ge, Sn, Pb)}
- G11B 2007/25711: {containing carbon}
- G11B 2007/25713: {containing nitrogen}
- G11B 2007/25715: {containing oxygen}
- H10N 70/026: {by physical vapor deposition, e.g. sputtering}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- Y10S 430/146: Laser beam
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.

## Claims

### Claim 1

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL1 consisting of La, Ga and In, and Zr, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
ZrQ1L1T1O100-Q1-T1(atom %)
where L1 is at least one element selected from the group GL1, and Q1 and T1 satisfy 1.0≦Q1≦31.6, 3.3≦T1≦38.8, and 20<Q1+T1<60.

### Claim 2 (depends on 1)

The information recording medium according to claim 1, wherein L1 is Ga.

### Claim 3 (depends on 1)

The information recording medium according to claim 1,
wherein the oxide-based material layer contains a material that can be expressed by:
(D1)X1(E1)100-X1(mol %)
where D1 is an oxide of Zr, E1 is an oxide of at least one element selected from the group GL1, and X1 satisfies 5<X1<95.

### Claim 4 (depends on 3)

The information recording medium according to claim 3,
wherein D1 is ZrO2 and E1 is Ga2O3.

### Claim 5

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and oxygen (O)),
wherein the oxide-based material layer contains a material having a composition expressed by:
M1Q2L3T2O100-Q2-T2(atom %)
where M1 is a mixture of Zr and Hf, or Hf, L3 is at least one element selected from the group GL3, and Q2 and T2 satisfy 1.0≦Q2≦32.2, 1.7≦T2≦46.3, and 20<Q2+T2<60.

### Claim 6 (depends on 5)

The information recording medium according to claim 5, wherein L3 is Ga.

### Claim 7 (depends on 5)

The information recording medium according to claim 5,
wherein the oxide-based material layer contains a material that can be expressed:
(D2)X2(E3)100-X2(mol %)
where D2 is an oxide of M1, E3 is an oxide of at least one element selected from the group GL3, and X2 satisfies 5<X2<95.

### Claim 8 (depends on 7)

The information recording medium according to claim 7,
wherein E3 is Ga2O3.

### Claim 9

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Si, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
ZrQ3SiR1L2T3O100-Q3-R1-T3(atom %)
where L2 is at least one element selected from the group GL2, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.

### Claim 10 (depends on 9)

The information recording medium according to claim 9,
wherein L2 is Ga.

### Claim 11 (depends on 9)

The information recording medium according to claim 9,
wherein the oxide-based material layer contains a material that can be expressed by:
(ZrO2)X3(g)Z1(E2)100-X3-Z1(mol %)
where g is at least one compound selected from the group consisting of SiO2, Si3N4 and SiC, E2 is an oxide of at least one element selected from the group GL2, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.

### Claim 12 (depends on 11)

The information recording medium according to claim 11, wherein E2 is Ga2O3.

### Claim 13

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Si, and oxygen (O),
wherein the oxide-based material layer further contains at least one element selected from the group GK1 consisting of carbon (C), nitrogen (N) and Cr.

### Claim 14 (depends on 13)

The information recording medium according to claim 13,
wherein the oxide-based material layer contains a material having a composition expressed by:
ZrQ3SiR1L2T3K1J1O100-Q3-R1-T3-J1(atom %)
where L2 is at least one element selected from the group GL2, and K1 is at least one element selected from the group GK1, and Q3, R1, T3 and J1 satisfy 0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80.

### Claim 15 (depends on 14)

The information recording medium according to claim 14,
wherein L2 is Ga.

### Claim 16 (depends on 14)

The information recording medium according to claim 14,
wherein the oxide-based material layer contains a material that can be expressed by:
(ZrO2)X3(g)Z1(E2)100-X3-Z1(mol %)
where g is at least one compound selected from the group consisting of SiO2, Si3N4 and SiC, E2 is an oxide of at least one element selected from the group GL2, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.

### Claim 17 (depends on 16)

The information recording medium according to claim 16, wherein E2 is Ga2O3.

### Claim 18 (depends on 14)

The information recording medium according to claim 14,
wherein the oxide-based material layer contains a material that can be expressed by:
(ZrO2)X3(SiO2)Z2(E2)100-X3-Z2-A1(mol %)
where f is at least one compound selected from the group consisting of SIC, Si3N4, and Cr2O3, E2 is an oxide of at least one element selected from the group GL2, and X3, Z2 and A1 satisfy 10≦X3<90, 0<Z2≦50, 0<A1≦50, and 10<X3+Z2A1≦90.

### Claim 19 (depends on 18)

The information recording medium according to claim 18, wherein E2 is Ga2O3.

### Claim 20

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
ZrQ4CrUL2T4O100-Q4-U-T4(atom %)
where L2 is at least one element selected from the group GL2, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.

### Claim 21 (depends on 20)

The information recording medium according to claim 20 wherein L2 is Ga.

### Claim 22 (depends on 20)

The information recording medium according to claim 20,
wherein the oxide-based material layer contains a material that can be expressed by:
(ZrO2)X4(Cr2O3)(E2)100-X4-A2(mol %)
where E2 is an oxide of at least one element selected from the group GL2, and X4 and A2 satisfy 10≦X4<90, 0<A2≦40, and 10<X4+A2≦90.

### Claim 23 (depends on 22)

The information recording medium according to claim 22, wherein E2 is Ga2O3.

### Claim 24

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
ZrQ4CrUL2T4SiR2K2J2O100-Q4-U-T4-R2-J2(atom %)
where L2 is at least one element selected from the group GL2, and K2 is at least one element selected from the group GK2 consisting of nitrogen (N) and carbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.

### Claim 25 (depends on 24)

The information recording medium according to claim 24,
wherein L2 is Ga.

### Claim 26 (depends on 24)

The information recording medium according to claim 24,
wherein the oxide-based material layer contains a material that can be expressed by:
(ZrO2)X4(Cr2O3)A2(h)Z3(E2)100-X4-A2-Z3(mol %)
where h is at least one compound selected from the group consisting of Si3N4 and SiC, E2 is an oxide of at least one element selected from the group GL2, and X4, A2, and Z3 satisfy 10≦X4<90, 0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90.

### Claim 27 (depends on 26)

The information recording medium according to claim 26, wherein E2 is Ga2O3.

### Claim 28 (depends on 1)

The information recording medium according to claim 1, further comprising at least one recording layer.

### Claim 29 (depends on 28)

The information recording medium according to claim 28,
wherein a phase change is caused in the recording layer.

### Claim 30 (depends on 29)

The information recording medium according to claim 29,
wherein the recording layer comprises any one material selected from the group consisting of Ge—Sb—Te, Ge—Sn—Sb—Te, Ge—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, Ge—Sn—Sb—Bi—Te, Ag—In—Sb—Te and Sb—Te.

### Claim 31 (depends on 30)

The information recording medium according to claim 30,
wherein a thickness of the recording layer is 20 nm or less.

### Claim 32 (depends on 28)

The information recording medium according to claim 28,
wherein the oxide-based material layer is provided in contact with at least one surface of the recording layer.

### Claim 33 (depends on 28)

The information recording medium according to claim 28, comprising a plurality of recording layers,
wherein at least one of the plurality of recording layers is said recording layer.

### Claim 34

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL1 consisting of La, Ga and in, at least one element selected from the group GL consisting of Al, Mg and Y, and Zr, and oxygen (O)),
wherein the oxide-based material layer contains a material having a composition expressed by:
ZrQ1L1T1LT7O100-Q1-T1-T7(atom %)
where L1 is at least one element selected from the group GL1, L is at least one element selected from the group GL, and Q1, T1 and T7 satisfy 1.0≦Q1≦32.2, 1.7≦T1+T7≦46.3, and 20<Q1+T1<60.

### Claim 35 (depends on 5)

The information recording medium according to claim 5, further comprising at least one recording layer.

### Claim 36 (depends on 9)

The information recording medium according to claim 9, further comprising at least one recording layer.

### Claim 37 (depends on 20)

The information recording medium according to claim 20, further comprising at least one recording layer.

### Claim 38

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, at least one element selected from the group GL4 consisting of Ce, Al and In, and M1 (where M1 is a mixture of Zr and Hf, or Hf), and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
M1Q2L3T5L4T6O100-Q2-T5-T6(atom %)
where M1 is a mixture of Zr and Hf, or Hf, L3 is at least one element selected from the group GL3, L4 is at least one element selected from the group GL4, and Q2, T5 and T6 satisfy 1.0≦Q2≦32.2, 1.7≦T5+T6≦46.3, and 20<Q2+T5+T6<60.

### Claim 39 (depends on 38)

The information recording medium according to claim 38, wherein the oxide-based material layer contains a material that can be expressed:
(D2)100-X5-X6(E4)X6(E3)X5(mol %)
Where D2 is an oxide of M1, E3 is an oxide of at least one element selected from the group GL3, E4 is an oxide of at least one element selected from the group GL4, and X5 and X6 satisfy 5≦X5+X6≦95.

### Claim 40

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg, and Y, and Si, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
M1Q3SiR1L3T3O100-Q3-R1-T3(atom %)
where L3 is at least one element selected from the group GL3, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.

### Claim 41 (depends on 40)

The information recording medium according to claim 40, wherein L3 is Ga.

### Claim 42 (depends on 40)

The information recording medium according to claim 40,
wherein the oxide-based material layer contains a material that can be expressed by:
(D2)X3(g)Z1(E3)100-X3-Z1(mol %)
where D2 is an oxide of M1, g is at least one compound selected from the group consisting of SiO2, Si3N4 and SiC, E3 is an oxide of at least one element selected from the group GL3, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.

### Claim 43 (depends on 42)

The information recording medium according to claim 42, wherein E3 is Ga2O3.

### Claim 44

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg, and Y, and Si, and oxygen (O),
wherein the oxide-based material layer further contains at least one element selected from the group GK1 consisting of carbon (C), nitrogen (N) and Cr.

### Claim 45 (depends on 44)

The information recording medium according to claim 44,
wherein the oxide-based material layer contains a material having a composition expressed by:
M1Q3SiR1L3T3K1J1O100-Q3-R1-T3-J1(atom %)
where K1 is at least one element selected from the group GK1, L3 is at least one element selected from the group GL3, and Q3, R1, T3 and J1 satisfy 0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80.

### Claim 46 (depends on 45)

The information recording medium according to claim 45,
wherein L3 is Ga.

### Claim 47 (depends on 45)

The information recording medium according to claim 45,
wherein the oxide-based material layer contains a material that can be expressed by:
(D2)X3(g)Z1(E3)100-X3-Z1(mol %)
where D2 is an oxide of M1, g is at least one compound selected front the group consisting of SiO2, Si3N4 and SiC, E3 is an oxide of at least one element selected from the group GL3, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.

### Claim 48 (depends on 47)

The information recording medium according to claim 47, wherein E3 is Ga2O3.

### Claim 49 (depends on 45)

The information recording medium according to claim 45,
wherein the oxide-based material layer contains a material that can be expressed by:
(D2)X3(SiO2)Z2(f)A1(E3)100-X3-Z2-A1(mol %)
where D2 is an oxide of M1, f is at least one compound selected from the group consisting of SiC, Si3N4, and Cr2O3, E3 is an oxide of at least one element selected from the group GL3, and X3, Z2 and A1 satisfy 10≦X3<90, 0<Z2≦50, 0<A1≦50, and 10<X3+Z2+A1≦90.

### Claim 50 (depends on 49)

The information recording medium according to claim 49, wherein E3 is Ga2O3.

### Claim 51

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
M1Q4CrUL3T4O100-Q4-U-T4(atom %)
where L3 is at least one element selected from the group GL3, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.

### Claim 52 (depends on 51)

The information recording medium according to claim 51,
wherein L3 is Ga.

### Claim 53 (depends on 51)

The information recording medium according to claim 51,
wherein the oxide-based material layer contains a material that can be expressed by:
(D2)X4(Cr2O3)A2(E3)100-X4-A2(mol %)
where D2 is an oxide of M1, E3 is an oxide of at least one element selected from the group GL3, and X4 and A2 satisfy 10≦X4<90, 0<A2≦40, and 10<X4+A2≦90.

### Claim 54 (depends on 53)

The information recording medium according to claim 53, wherein E3 is Ga2O3.

### Claim 55

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:
an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, and oxygen (O),
wherein the oxide-based material layer contains a material having a composition expressed by:
M1Q4CrUL3T4SiR2K2J2O100-Q4-U-T4-R2-J2(atom %)
where L3 is at least one element selected from the group GL3, and K2 is at least one element selected from the group GK2 consisting of nitrogen (N) and carbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.

### Claim 56 (depends on 55)

The information recording medium according to claim 55,
wherein L3 is Ga.

### Claim 57 (depends on 55)

The information recording medium according to claim 55,
wherein the oxide-based material layer contains a material that can be expressed by:
(D2)X4(Cr2O3)A2(h)Z3(E3)100-X4-A2-Z3(mol %)
where D2 is an oxide of M1, h is at least one compound selected from the group consisting of Si3N4 and SiC, E3 is an oxide of at least one element selected from the group GL3, and X4, A2, and Z3 satisfy 10≦X4<90, 0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90.

### Claim 58 (depends on 57)

The information recording medium according to claim 57, wherein E3 is Ga2O3.