# US 7,608,335 B2 · Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

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- Number: US 7,608,335 B2
- Document ID: US7608335B2
- Status: Granted
- Kind: B2
- Application number: 11/001,461
- Filed: 2004-11-30
- Published: 2006-06-01
- Granted: 2009-10-27
- Earliest claimed: 2004-11-30
- Assignees: Los Alamos National Security, LLC
- Inventors: Alp T. Findikoglu; Quanxi Jia; Paul N. Arendt; Vladimir Matias; Woong Choi
- Web page: https://patentgrep.com/patent/US7608335B2

## CPC

- C30B 29/06: Silicon
- C30B 25/18: characterised by the substrate
- H10P 14/2901: {Materials}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/3238: {being insulating materials}
- H10P 14/3251: {consisting of three or more layers}
- H10P 14/3402: {characterised by the chemical composition}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3451: {Structure}
- H10P 14/36: {characterised by treatments done before the formation of the materials}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

## Claims

### Claim 1

An article comprising:
a base substrate including: (i) a base material selected from the group consisting of polycrystalline materials and amorphous materials, and (ii) at least one layer of a differing material upon the base material wherein the at least one layer of a differing material includes (a) an inert material layer upon the base material and (b) a layer selected from the group consisting of an oxide material or an oxynitride material upon the inert material layer; and,
a gamma-aluminum oxide buffer material layer upon the base substrate; and,
a layer of biaxially-oriented silicon upon the gamma-aluminum oxide buffer material layer.

### Claim 2 (depends on 1)

The article of claim 1 wherein the base material is a polycrystalline metal.

### Claim 3 (depends on 2)

The article of claim 2 wherein the at least one layer of a differing material further includes an oriented material layer deposited by ion beam assisted deposition onto the layer of an oxide material or an oxynitride material.

### Claim 4 (depends on 3)

The article of claim 3 further including a layer of epitaxial oriented material between the oriented material layer and the gamma-aluminum oxide buffer material layer.

### Claim 5 (depends on 3)

The article of claim 3 wherein the oriented material layer is selected from the group consisting of magnesium oxide, yttrium-stabilized zirconia, gadolinium zirconium oxide, and titanium nitride.

### Claim 6 (depends on 5)

The article of claim 5 wherein the oriented material layer has a rock salt or rock-salt-like structure.

### Claim 7 (depends on 3)

The article of claim 3 wherein the oriented material layer is magnesium oxide.

### Claim 8 (depends on 7)

The article of claim 7 wherein the oriented material layer has a rock salt or rock-salt-like structure.

### Claim 9 (depends on 3)

The article of claim 3 wherein the oriented material layer has a rock salt or rock-salt-like structure.

### Claim 10 (depends on 2)

article of claim 2 wherein the inert material layer is selected from the group consisting of aluminum oxide, erbium oxide, and yttrium oxide.

### Claim 11 (depends on 2)

The article of claim 2 wherein the layer of an oxide material or an oxynitride material is selected from the group consisting of yttrium oxide, erbium oxide, yttria-stabilized zirconia, cerium oxide, europium oxide and aluminum oxynitride.

### Claim 12 (depends on 1)

The article of claim 1 wherein the base material is selected from the group consisting of a flexible polycrystalline metal and a glass.

### Claim 13 (depends on 1)

The article of claim 1 wherein the layer of semiconductor material is characterized as having a biaxial orientation.