# US 7,608,299 B2 · Process for the deposition by CVD of a silver film on a substrate

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- Number: US 7,608,299 B2
- Document ID: US7608299B2
- Status: Granted
- Kind: B2
- Application number: 10/550,459
- Filed: 2004-03-19
- Published: 2007-06-28
- Granted: 2009-10-27
- Earliest claimed: 2003-03-25
- Assignees: Centre National De La Recherche Scientifique; Qualiflow Therm
- Inventors: Jean-Manuel Decams; Hervé Guillon; Pascal Doppelt
- Web page: https://patentgrep.com/patent/US7608299B2

## CPC

- C23C 16/18: from metallo-organic compounds
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

The invention relates to the deposition of thin silver films on various substrates, particularly superconductor substrates. The method consists of CVD deposition of silver on a substrate with the aid of a silver precursor solution. The silver precursor is an RCO2Ag silver carboxylate, wherein R is a linear or branched radical having 3-7 carbon atoms, used in the form of an organic liquid solution. The precursor concentration of the solution ranges from 0.01 to 0.6 mol/l. The organic liquid comprises an amine and/or a nitrile and, optionally, a solvent whose evaporation temperature is lower than the decomposition temperature of the precursor. The percentage by volume of the amine and/or nitrile in the organic liquid is more than 0.1%.

## Claims

### Claim 1

A process for depositing a silver film on a substrate, comprising depositing silver on the substrate by chemical vapor deposition, in an oxygen atmosphere or in a hydrogen atmosphere, of a solution comprising a silver precursor, an amine and/or a nitrile, and a solvent, wherein:
the silver precursor is a silver carboxylate RCO2Ag in which R is a linear or branched alkyl radical that has 3 to 7 carbon atoms;
the concentration of the silver precursor in the solution is between 0.01 and 0.6 mol/l;
optionally the solvent has an evaporation temperature that is less than the decomposition temperature of the silver precursor; and
the percentage by volume of the amine and/or the nitrile in the solvent is more than 0.1%.

### Claim 2 (depends on 1)

The process according to claim 1, wherein the silver precursor is the silver pivalate (CH3)3—C—CO2Ag.

### Claim 3 (depends on 1)

The process according to claim 1, wherein the solvent is an organic compound that is liquid at ambient temperature and up to about 200° C. under normal pressure conditions.

### Claim 4 (depends on 3)

The process according to claim 3, wherein the solvent is selected from the group consisting of mesitylene, cyclohexane, xylene, toluene and n-octane.

### Claim 5 (depends on 1)

The process according to claim 1, wherein the amine is a monoamine that is selected from the group consisting of n-hexylamine, isobutylamine, disec-butylamine, triethylamine, benzylamine, ethanolamine and diisopropylamine.

### Claim 6 (depends on 1)

The process according to claim 1, wherein the amine is a polyamine.

### Claim 7 (depends on 1)

The process according to claim 1, wherein the nitrile is selected from the group consisting of acetonitrile, valeronitrile, benzonitrile and propionitrile.

### Claim 8 (depends on 1)

The process according to claim 1, wherein the substrate is formed by a material that is selected from the group consisting of superconductive high Tc materials, ceramics, thermoresistant polymers, glasses, MgO, LaAlO3, Ni, Si, AsGa, InP, SiC and SiGe.

### Claim 9 (depends on 1)

The process according to claim 1, wherein the temperature of the substrate on which silver is to be deposited is between 200 and 450° C.

### Claim 10 (depends on 1)

The process according to claim 1, wherein silver is deposited on the substrate in the presence of a cold plasma.