# US 7,608,206 B1 · Non-lead resistor composition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,206 B1 - Document ID: US7608206B1 - Status: Granted - Kind: B1 - Application number: 12/105,683 - Filed: 2008-04-18 - Published: 2009-10-22 - Granted: 2009-10-27 - Earliest claimed: 2008-04-18 - Assignees: E.I. duPont de Nemours and Company - Inventors: Paul Douglas VerNooy; Alfred T. Walker; Kenneth Warren Hang - Web page: https://patentgrep.com/patent/US7608206B1 ## CPC - C01G 55/001: {Preparation involving a liquid-liquid extraction, an adsorption or an ion-exchange} - C01G 55/00: Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum - C03C 8/14: Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions - C04B 41/009: {characterised by the material treated} - C04B 41/5022: {with vitreous materials (composition of vitreous glazes and enamels C03C; ceramic pigments C09C1/0009)} - C04B 41/52: Multiple coating or impregnating {multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation} - C04B 41/86: Glazes; Cold glazes - C04B 41/90: at least one coating being a metal - H01B 1/22: the conductive material comprising metals or alloys - H01C 7/003: {Thick film resistors} - H01C 17/06533: {composed of oxides} - C01P 2002/54: one element only - C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram - C01P 2004/61: Micrometer sized, i.e. from 1-100 micrometer - C01P 2004/62: Submicrometer sized, i.e. from 0.1-1 micrometer - C04B 2111/00844: {for electronic applications} - C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20) - C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K}) - H01C: RESISTORS - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li2RuO3 of diameter between 0.5 and 5 microns and a lead-free frit. The particles have had the lithium at or near primarily the surface of the particle at least partially exchanged for atoms of other metals. ## Claims ### Claim 1 A composition comprising particles of Li2RuO3 in which only Li atoms have been exchanged for Al, Ga, K, Ca, Mn, H, Na, Cr, Co, Ni, V, Cu, Zn, or Ti atoms, or a combination thereof. ### Claim 2 (depends on 1) A composition according to claim 1 in which at least 50 mol % of the Li atoms have been exchanged. ### Claim 3 (depends on 1) A composition according to claim 1 in which at least 75 mol % of the Li atoms have been exchanged. ### Claim 4 (depends on 1) A composition according to claim 1 wherein a Li2RuO3 particle comprises first and second layers, and more Li atoms are exchanged in the first layer than in the second layer. ### Claim 5 (depends on 4) A composition according to claim 4 wherein more than 80% of the Li atoms in the first layer are exchanged. ### Claim 6 (depends on 4) A composition according to claim 4 wherein less then 20% of the Li atoms in the second layer are exchanged. ### Claim 7 (depends on 4) A composition according to claim 4 wherein the first and second layers are adjacent. ### Claim 8 (depends on 1) A composition according to claim 1 wherein an atom exchanged for Li has a 2+ valence or a 3+ valence. ### Claim 9 (depends on 1) A composition according to claim 1 wherein an atom exchanged for Li comprises one or more members of the group consisting of Al, Cu, Mg, Zn, Ga, and Mn. ### Claim 10 (depends on 1) A composition according to claim 1 that is described by formula as follows: M+1xM+2yM+3zLi2-x-2y-3zRuO3 where (x+2y+3z)≦1.5, and where M is selected from one or more members of the group consisting of Al, Ga, K, Ca, Mn, Na, H, Cr, Co, Ni, V, Cu, Zn, and Ti. ### Claim 11 (depends on 10) A composition according to claim 10 further comprising one or both of an alkali metal, zinc alumino-borosilicate frit, and an alkaline-earth metal, zinc alumino-borosilicate frit. ### Claim 12 (depends on 11) A resistor comprising a composition according to claim 11. ### Claim 13 (depends on 12) A resistor according to claim 12 that has a sheet resistance of about 100 kilohms per square to about 10 megohms per square, and/or a TCR of ±100 ppm/° C. ### Claim 14 (depends on 12) An electronic device comprising a resistor according to claim 12. ### Claim 15 (depends on 1) A composition according to claim 1 further comprising one or both of an alkali metal, zinc alumino-borosilicate frit, and an alkaline-earth metal, zinc alumino-borosilicate frit. ### Claim 16 (depends on 15) A resistor comprising a composition according to claim 15. ### Claim 17 (depends on 16) A resistor according to claim 16 that has a sheet resistance of about 100 kilohms per square to about 10 megohms per square, and/or a TCR of ±100 ppm/° C. ### Claim 18 (depends on 16) An electronic device comprising a resistor according to claim 16. ### Claim 19 A composition comprising particles of Li2RuO3 in which Li atoms have been exchanged for Al, Ga, K, Ca, Mn, Fe, H, Na, Cr, Co, Ni, V, Cu, Zn, or Ti atoms, or a combination thereof, wherein a Li2RuO3 particle comprises first and second layers, and more Li atoms are exchanged in the first layer than in the second layer. ### Claim 20 (depends on 19) A composition according to claim 19 in which at least 50 mol % of the Li atoms have been exchanged. ### Claim 21 (depends on 19) A composition according to claim 19 wherein more than 80% of the Li atoms in the first layer are exchanged. ### Claim 22 (depends on 19) A composition according to claim 19 wherein less than 20% of the Li atoms in the second layer are exchanged. ### Claim 23 (depends on 19) A composition according to claim 19 wherein the first and second layers are adjacent. ### Claim 24 (depends on 19) A composition according to claim 19 further comprising one or both of an alkali metal, zinc alumino-borosilicate frit, and an alkaline-earth metal, zinc alumino-borosilicate frit. ### Claim 25 (depends on 24) A resistor comprising a composition according to claim 24. ### Claim 26 (depends on 25) An electronic device comprising a resistor according to claim 25.