# US 7,608,146 B2 · Method and apparatus for the production of crystalline silicon substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,608,146 B2 - Document ID: US7608146B2 - Status: Granted - Kind: B2 - Application number: 11/861,375 - Filed: 2007-09-26 - Published: 2008-04-03 - Granted: 2009-10-27 - Earliest claimed: 2006-09-28 - Assignees: BP Corporation North America Inc. - Inventors: Roger F. Clark - Web page: https://patentgrep.com/patent/US7608146B2 ## CPC - C30B 15/14: Heating of the melt or the crystallised materials - C30B 15/007: {Pulling on a substrate} - C30B 15/06: Non-vertical pulling - C30B 29/06: Silicon - Y10T 117/10: Apparatus - Y10T 117/102: for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament] - Y10T 117/1048: Pulling includes a horizontal component - Y10T 117/1068: including heating or cooling details [e.g., shield configuration] - Y10T 117/1092: Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger] - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon. ## Claims ### Claim 1 An apparatus for producing a continuous, ribbon comprising a feed material, said apparatus comprising: a melt chamber for melting said feed material, said melt chamber having an outlet; a growth tray positioned to receive melted feed material from said outlet in said melt chamber, a baffle positioned in said outlet of said melt chamber and adapted to allow only melted feed material to flow through said outlet and into said growth tray, retaining any solids within the melt chamber; and a heat-extracting means spaced from but in thermal communication with said melted feed material in said growth tray and positioned downstream of said outlet in said melt chamber, said heat-extracting means including an adjustable means adapted to regulate the amount of heat which will radiate from said melted feed material in said growth tray. ### Claim 2 (depends on 1) The apparatus of claim 1 wherein heat-extracting means comprises: a chimney positioned on said growth plate downstream from said outlet of said melt chamber, said chimney adapted to allow heat to radiate from said melted feed material in said growth tray upward through said chimney; and wherein said adjustable means comprises: at least one throttle plate pivotably mounted in said chimney and moveable to control the area of the heat passage through said chimney. ### Claim 3 (depends on 2) The apparatus of claim 2 including: a dimple in said growth tray positioned below said outlet in said melt chamber, said dimple adapted to reduce the splashdown depth of melted feed material and to limit ripple formation of the melted feed material as it flows through said outlet and into said growth tray. ### Claim 4 (depends on 3) The apparatus of claim 3 including: a ridge in said growth tray positioned downstream of said dimple and adapted to limit wave propagation in the melted feed material in said growth tray. ### Claim 5 (depends on 1) The apparatus of claim 1 wherein said feed material comprises a semiconductor material. ### Claim 6 (depends on 1) The apparatus of claim 1 wherein said feed material comprises silicon. ### Claim 7 An apparatus for producing a continuous, ribbon comprising a feed material, said apparatus comprising: a melt chamber for melting said feed material, said melt chamber having an outlet; a growth tray positioned to receive melted feed material from said outlet in said melt chamber, a growth tray susceptor having said growth tray supported thereon; and an electrical heating means for supplying induction heat to said growth tray through said growth tray susceptor to maintain the melted feed material in a liquid phase during the growth of said continuous ribbon; and a heat-extracting means spaced from but in thermal communication with said melted feed material in said growth tray and positioned downstream of said outlet in said melt chamber, said heat-extracting means including an adjustable means adapted to regulate the amount of heat which will radiate from said melted feed material in said growth tray. ### Claim 8 (depends on 7) The apparatus of claim 7 wherein said melt chamber comprises: a pour crucible susceptor having said pour crucible and said baffle supported thereon; and an electrical heating means for supplying induction heat to said pour crucible through said pour crucible susceptor to maintain feed material slightly below its melting point and regulate heat input to control rate of melting on demand.