# US 7,607,828 B2 · Methods and systems for protection from over-stress > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,607,828 B2 - Document ID: US7607828B2 - Status: Granted - Kind: B2 - Application number: 11/525,474 - Filed: 2006-09-22 - Published: 2008-03-27 - Granted: 2009-10-27 - Earliest claimed: 2006-09-22 - Assignees: Infineon Technologies AG - Inventors: Robert Carl Beier; Raymond Joseph Notarantonio - Web page: https://patentgrep.com/patent/US7607828B2 ## CPC - G06F 1/206: {comprising thermal management} - H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract One embodiment of the invention relates to a circuit for over-stress protection. The circuit includes a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state. The circuit is further configured to selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function. Other methods and systems are also disclosed. ## Claims ### Claim 1 A circuit, comprising: a temperature rate sensor configured to monitor the temperature of a semiconductor device during a first state and selectively switch the semiconductor device from the first state to a second state if the temperature increases at a rate that has a predetermined relationship with a temperature rate function, the temperature rate sensor comprising: a temperature sensor configured to provide the temperature of the semiconductor device; a differentiator configured to provide a differentiated temperature by differentiating the temperature; and a comparator configured to compare the differentiated temperature to an adjustable reference level representative of the temperature rate function, and to provide a comparator output value therefrom; and a logic circuit that is coupled to an output node of the comparator, wherein the logic circuit utilizes the comparator output value to provide a logic control signal to switch the semiconductor device from the first state to the second state. ### Claim 2 (depends on 1) The circuit of claim 1 wherein the semiconductor device comprises a MOSFET. ### Claim 3 A circuit for protection from over-stress, comprising: a temperature rate sensor configured to monitor a temperature of a semiconductor device and selectively provide an output signal based on whether the temperature increases at a rate that has a predetermined relationship with a temperature rate function; an integrator configured to, based on the output signal, selectively integrate the temperature during an integration period; wherein the semiconductor device is turned off if the integrated temperature measured over the integration period has a predetermined relationship with an integrator reference level. ### Claim 4 (depends on 3) The circuit of claim 3, further comprising: an inductor configured to generate flyback energy when turned from an on-state to an off-state by the semiconductor device; wherein the circuit is configured to provide a diagnostic fault flag if the flyback energy causes the rate of temperature increase to have the predetermined relationship with the temperature rate function. ### Claim 5 (depends on 3) The circuit of claim 3, wherein the temperature rate sensor comprises: a temperature sensor configured to provide the temperature of the semiconductor device; and a differentiator configured to aid in designating the start of the integration period. ### Claim 6 (depends on 5) The circuit of claim 5 wherein the temperature rate sensor further comprises: a comparator configured to compare an output of the differentiator to a reference level, and to provide a comparator output value therefrom; and a time period circuit configured to receive the comparator output value and provide the integration period therefrom. ### Claim 7 (depends on 6) The circuit of claim 6 wherein the temperature rate sensor further comprises: a second comparator configured to compare the integrated temperature to an integrator temperature function, and provide a second comparator output value therefrom; wherein the second comparator output value can facilitate switching the semiconductor device from a first state to a second state. ### Claim 8 A method for protecting a semiconductor device from over-stress, comprising: monitoring the temperature of a semiconductor device during an on-state; comparing a temperature rate associated with the monitored temperature to a temperature rate function; selectively integrating the temperature of the semiconductor device over a time window, where the selective integration is based on the comparison of the temperature rate to the temperature rate function; and comparing the integrated temperature to an integrator reference level to facilitate switching the device from the on-state to an off-state. ### Claim 9 (depends on 8) The method of claim 8, wherein the integrating starts at a time related to when the monitored temperature favorably compares to the temperature rate function. ### Claim 10 (depends on 9) The method of claim 9, further comprising: measuring the absolute temperature of the semiconductor device; and switching the semiconductor device to an off-state if the absolute temperature exceeds a maximum temperature. ### Claim 11 A circuit for protection from over-stress, comprising: means for monitoring the temperature of a semiconductor device during an on-state and for comparing a temperature rate associated with the monitored temperature to a temperature rate function; and circuitry to facilitate switching the semiconductor device from a first state to a second state if the temperature rate favorably compares to the temperature rate function; integration means for integrating the temperature of the semiconductor device over a time window; and means for providing an enabling signal that is representative of the time window for which integration is carried out. ### Claim 12 (depends on 11) The circuit of claim 11, further comprising: means for comparing the integrated temperature to a integrated temperature function to facilitate switching the device from the on-state to an off-state. ### Claim 13 (depends on 12) The method of claim 12, further comprising: diagnostic circuitry for delivering a diagnostic signal from the circuit, wherein the diagnostic signal is indicative of an excessive temperature in the circuit. ### Claim 14 A circuit for protection from over-stress, comprising: a temperature rate sensor configured to monitor a temperature of a semiconductor device and integrate the temperature during an integration period, the temperature rate sensor comprising: a temperature sensor configured to provide the temperature of the semiconductor device; a differentiator configured to aid in designating the start of the integration period; and an integrator configured to integrate the temperature during the integration period; wherein the integration period relates to a time at which a rate of temperature increase has a pre-determined relationship with a temperature rate function. ### Claim 15 A circuit for protection from over-stress, comprising: a temperature rate sensor configured to monitor a temperature of a semiconductor device and integrate the temperature during an integration period; wherein the integration period relates to a time at which a rate of temperature increase has a pre-determined relationship with a temperature rate function; and an inductor configured to generate flyback energy when turned from an on-state to an off-state by the semiconductor device; wherein the circuit is configured to provide a diagnostic fault flag if the flyback energy causes the rate of temperature increase to have the predetermined relationship with the temperature rate function.