# US 7,607,355 B2 · Semiconductor device

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- Number: US 7,607,355 B2
- Document ID: US7607355B2
- Status: Granted
- Kind: B2
- Application number: 12/069,539
- Filed: 2008-02-11
- Published: 2008-09-25
- Granted: 2009-10-27
- Earliest claimed: 2007-02-16
- Assignees: Yamaha Corporation
- Inventors: Kenichi Shirasaka; Yukitoshi Suzuki
- Web page: https://patentgrep.com/patent/US7607355B2

## CPC

- H04R 19/00: Electrostatic transducers
- G01L 19/0627: {Protection against aggressive medium in general}
- G01L 19/0636: {using particle filters}
- H10W 72/01515: {Forming coatings}
- H10W 72/075: {of bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/753: {between laterally-adjacent chips}
- H04R: LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS (producing sounds with frequency not determined by supply frequency G10K)
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device is equipped with a semiconductor sensor chip for detecting pressure variations that is arranged inside of a hollow cavity of a housing, wherein an opening is formed in a prescribed region of the housing, which is not positioned opposite to the semiconductor sensor chip, so as to allow the hollow cavity to communicate with an external space. The opening is formed using at least one through-hole having a thin slit-like shape. Alternatively, the opening is formed using plural through-holes each having a desired shape such as a thin slit-like shape, a circular shape, and a sectorial shape. Thus, it is possible to reduce negative influences due to environmental factors such as dust and sunlight with respect to the semiconductor sensor chip.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor sensor chip for detecting variations in pressure;
a housing having a cavity, within which the semiconductor sensor chip is disposed; and
a plurality of through-holes which are collectively formed in a prescribed region of the housing, said region being disposed at a position other than opposite to the semiconductor sensor chip, wherein the through-holes allow pressure variations external to the cavity to be transmitted to the semiconductor sensor chip.

### Claim 2 (depends on 1)

A semiconductor device according to claim 1, wherein each
through-hole has a thin slit-like shape.

### Claim 3 (depends on 2)

A semiconductor device according to claim 2, wherein the through-holes are parallel to each other.

### Claim 4 (depends on 2)

A semiconductor device according to claim 2, wherein a length of each of the through-holes is larger than three times a width of the through-hole.

### Claim 5 (depends on 2)

A semiconductor device according to claim 2, wherein a width of each of the through-holes is 0.3 mm or less.

### Claim 6 (depends on 1)

A semiconductor device according to claim 1, wherein the housing has at least a top and bottom, the semiconductor sensor chip being disposed on the bottom of the housing.

### Claim 7 (depends on 6)

A semiconductor device according to claim 6, wherein the plurality of through-holes are formed in the top of the housing.

### Claim 8

A semiconductor device comprising:
a semiconductor sensor chip for detecting variations in pressure;
a substrate having a chip mount surface for mounting the semiconductor sensor chip; and
a cover member which in combination with the substrate forms a cavity within which the semiconductor sensor chip is disposed, wherein at least a prescribed part of the cover member is composed of a porous material so that pressure variations external to the cavity are transmitted to the semiconductor sensor chip.

### Claim 9

A semiconductor device comprising:
a semiconductor sensor chip for detecting variations in pressure;
a housing having a cavity within which the semiconductor sensor chip is disposed; and
a plurality of through-holes formed in the housing so that pressure variations external to the cavity are transmitted to the semiconductor sensor chip, each through-hole being positioned in the housing such that a line extending through an axis of the through-hole does not intersect the semiconductor sensor chip.

### Claim 10 (depends on 9)

A semiconductor device according to claim 9, wherein the housing has at least a top and bottom, the semiconductor sensor chip being disposed on the bottom of the housing.

### Claim 11 (depends on 10)

A semiconductor device according to claim 10, wherein the plurality of through-holes are formed in the top of the housing.