# US 7,607,227 B2 · Method of forming a printhead

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- Number: US 7,607,227 B2
- Document ID: US7607227B2
- Status: Granted
- Kind: B2
- Application number: 11/350,158
- Filed: 2006-02-08
- Published: 2007-08-09
- Granted: 2009-10-27
- Earliest claimed: 2006-02-08
- Assignees: Eastman Kodak Company
- Inventors: Kathleen M. Vaeth; Constantine N. Anagnostopoulos; John A. Lebens
- Web page: https://patentgrep.com/patent/US7607227B2

## CPC

- B41J 2/16: Production of nozzles
- B41J 2/1626: {etching}
- B41J 2/1642: {thin film formation by CVD [chemical vapor deposition]}
- B41J 2/1645: {thin film formation by spincoating}
- Y10S 29/016: Method or apparatus with etching
- Y10T 29/49401: Fluid pattern dispersing device making, e.g., ink jet
- B41J: TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method of manufacturing a printhead includes providing a polymeric substrate having a surface; providing a patterned material layer on the surface of the polymeric substrate; and removing at least some of the polymeric substrate not covered by the patterned material layer using an etching process.

## Claims

### Claim 1

A method of manufacturing a printhead comprising:
providing a polymeric substrate having a surface, and the polymeric substrate being provided on a patterned carrier substrate;
providing a patterned material layer on the surface of the polymeric substrate, and the patterned material layer being a first material layer and being located between the patterned carrier substrate and the polymeric substrate;
removing at least some of the polymeric substrate not covered by the patterned material layer using an etching process;
providing a second material layer on a second surface of the polymeric substrate;
patterning the second material layer; and
removing the patterned carrier substrate from the second material layer, the polymeric substrate, and the first material layer.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
removing at least some of the polymeric substrate not covered by the second patterned material layer using the etching process includes using a reactive ion etching (RIE) process prior to removing the patterned carrier substrate from the second material layer, the polymeric substrate, and the first material layer.

### Claim 3

A method of manufacturing a printhead comprising:
providing a polymeric substrate on a patterned carrier substrate, the polymeric substrate having a surface;
providing a patterned material layer on the surface of the polymeric substrate;
removing portions of the polymeric substrate not covered by the patterned material layer using a reactive ion etching (RIE) process;
removing said portions of the polymeric substrate not covered by the patterned carrier substrate using the reactive ion etching process; and
removing the polymeric substrate from the patterned carrier substrate.

### Claim 4 (depends on 3)

The method according to claim 3, wherein depositing the patterned material layer includes depositing the material layer on the polymeric substrate using one of a chemical vapor deposition process and a spin-coating process and then patterning the material layer.

### Claim 5 (depends on 3)

The method according to claim 3, wherein the RIE etching process is an RIE oxygen plasma etching process.

### Claim 6

A method of manufacturing a printhead comprising:
providing a polymeric substrate having a surface, and the polymeric substrate being provided on a patterned carrier substrate;
providing a patterned material layer on the surface of the polymeric substrate, and the patterned material layer being a first material layer;
removing at least some of the polymeric substrate not covered by the patterned material layer using an etching process; and
providing a second material layer on a second surface of the polymeric substrate, and the second material layer being located between the patterned carrier substrate and the polymeric substrate; and
patterning the second material layer with the etching process using the patterned carrier substrate as a mask.

### Claim 7 (depends on 6)

The method according to claim 6, further comprising:
removing the patterned carrier substrate from the second material layer, the polymeric substrate, and the first material layer.

### Claim 8 (depends on 7)

The method according to claim 7, further comprising:
removing at least some of the polymeric substrate not covered by the second patterned material layer using an etching process prior to removing the patterned carrier substrate from the second material layer, the polymeric substrate, and the first material layer.