Thin INP spacer layer in a high speed laser for reduced lateral current spreading
AssigneeFinisar Corporation
InventorsAshish K. Verma, Sumesh Mani K. Thiyagarajan, David Bruce Young, Yuk Lung Ha, Roman Dimitrov
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Abstract
Embodiments disclosed herein relate to high-speed lasers such as FP and DFB lasers. In one embodiment, the high speed laser comprises a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more layers disposed between the active region and the mesa, wherein the thickness of at least one of the one or more layers is implemented to at least partially minimize the distance between the mesa and active region such that lateral current spreading between the mesa and the active region is at least partially minimized.
Claims20
A high-speed laser comprising:
- a substrate;
- an active region positioned above the substrate;
- a mesa positioned above the active region;
- a first confinement layer positioned above the active region;
- a second confinement layer positioned above the first confinement layer;
- and
- a first spacer layer positioned above the second confinement layer.
A DFB laser comprising:
- a mode modifier layer positioned above the substrate;
- a buffer layer positioned above the mode modifier layer;
- a first confinement layer positioned above the buffer layer;
- a second confinement layer positioned above the first confinement layer and below the active region;
- a third confinement layer positioned above the active region;
- a fourth confinement layer positioned above the third confinement layer;
- a first spacer layer positioned above the fourth confinement layer;
- an etch stop layer positioned above the first spacer layer;
- a second spacer layer positioned above the etch stop layer;
- a grating layer positioned above the second spacer layer;
- and
- a top layer positioned above the grating layer and below the mesa.
A DFB laser, comprising:
- An n-type substrate;
- an active region positioned above the substrate;
- a mesa positioned above the active region;
- a first p-type confinement layer positioned above the active region;
- a second p-type confinement layer positioned above the first p-type confinement layer;
- a first p-type spacer layer positioned above the second p-type confinement layer;
- a p-type etch stop layer positioned above the first p-type spacer layer;
- a second p-type spacer layer positioned above the p-type etch stop layer;
- and
- a p-type grating layer positioned above the second p-type spacer layer.
Dependencies are inferred from the claim text.