Semiconductor laser, method of manufacturing semiconductor device, optical pickup, and optical disk apparatus
AssigneeSony Corporation
InventorMasaru Kuramoto
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a semiconductor laser including: a first clad layer of a first conduction type; an active layer over said first clad layer; a saturable absorbing layer over said active layer; and a second clad layer of a second conduction type over said saturable absorbing layer; at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween. In the semiconductor laser, the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm, and the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
Claims11
A semiconductor laser comprising:
- a first clad layer of a first conduction type;
- an active layer over said first clad layer;
- a saturable absorbing layer over said active layer;
- and
- a second clad layer of a second conduction type over said saturable absorbing layer;
- at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween,
- wherein the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm, and the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
A method of manufacturing a semiconductor laser having:
- a first clad layer of a first conduction type;
- an active layer over said first clad layer;
- a saturable absorbing layer over said active layer;
- and
- a second clad layer of a second conduction type over said saturable absorbing layer;
- at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween,
- said method comprising the steps of growing said first clad layer, said active layer, said saturable absorbing layer and said second clad layer, and thereafter applying dry etching to at least said second clad layer to form said grooves so that the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm and that the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
An optical pickup using a semiconductor laser as a light source,
- wherein said semiconductor laser includes:
- a first clad layer of a first conduction type;
- an active layer over said first clad layer;
- a saturable absorbing layer over said active layer;
- and
- a second clad layer of a second conduction type over said saturable absorbing layer;
- at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween,
- the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm, and the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
An optical disk apparatus using a semiconductor laser as a light source,
- wherein said semiconductor laser includes:
- a first clad layer of a first conduction type;
- an active layer over said first clad layer;
- a saturable absorbing layer over said active layer;
- and
- a second clad layer of a second conduction type over said saturable absorbing layer;
- at least said second clad layer being provided with a pair of grooves parallel to each other with a predetermined spacing therebetween so as to form a ridge stripe therebetween,
- the distance from bottom surfaces of said grooves to an upper surface of said active layer is not less than 105 nm, and the distance from said bottom surfaces of said grooves to an upper surface of said saturable absorbing layer is not more than 100 nm.
Dependencies are inferred from the claim text.