Cantilever-type near-field probe for optical data storage and method of manufacturing the same

A cantilever-type near-field probe for a head of an optical data storage, the cantilever-type near-field probe comprising:

• a silicon substrate with a through-hole passing through upper and lower portions thereof;
• a dielectric film formed on a bottom portion of the silicon substrate as a mask layer;
• an oxide film deposited in a parabolic shape on the upper portion of the silicon substrate, and having an aperture formed in a vertex of the oxide film and communicating with the through-hole of the silicon substrate;
• and
• a metal film deposited on an upper portion of the oxide film, and having a near-field aperture communicating with the aperture of the oxide film and having a high throughput;
• wherein the oxide film deposited in a parabolic shape on the upper portion of the silicon substrate includes a silicon oxide film having a thickness of about 650 nm.

A cantilever-type near-field probe for a head of an optical data storage;

• the cantilever-type near-field probe comprising:
• a silicon substrate with a through-hole passing through upper and lower portions thereof;
• a dielectric film formed on a bottom portion of the silicon substrate as a mask layer;
• an oxide film deposited in a parabolic shape on the upper portion of the silicon substrate, and having an aperture formed in a vertex of the oxide film and communicating with the through-hole of the silicon substrate;
• and
• a metal film deposited on an upper portion of the oxide film, and having a near-field aperture communicating with the aperture of the oxide film and having a high throughput;
• wherein the dielectric film formed on the bottom portion of the silicon substrate as the mask layer includes a silicon nitride film having a thickness of about 300 nm.