Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsTomoaki Yabe, Akihito Tohata
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Abstract
A semiconductor memory device operates by using a fixed power and a variable power. The device includes a plurality of word lines which select rows of a memory cell array, a plurality of word line drivers each of which is connected to a corresponding one of the word lines and includes a first CMOS gate, a first cutoff switch which is connected between a fixed power terminal and a power terminal of the first CMOS gate and cuts off the fixed power in a sleep mode, a switching circuit which is connected to the plurality of word lines and connects the plurality of word lines to a ground terminal in the sleep mode, and a power control circuit which generates the variable power by using the fixed power and sets the variable power to 0 V in the sleep mode.
Claims19
A semiconductor memory device which operates by using a fixed power and a variable power, comprising:
- a plurality of word lines which select rows of a memory cell array;
- a plurality of word line drivers each of which is connected to a corresponding one of the word lines and includes a first CMOS gate;
- a first cutoff switch which is connected between a fixed power terminal and a power terminal of the first CMOS gate and cuts off the fixed power in a sleep mode;
- a switching circuit which is connected to the plurality of word lines and connects the plurality of word lines to a ground terminal in the sleep mode;
- a power control circuit which generates the variable power by using the fixed power and sets the variable power to 0 V in the sleep mode;
- and
- a row decoder to which the variable power is applied and which is connected to the plurality of word line drivers and selects a word line on the basis of an address signal.
Dependencies are inferred from the claim text.