Semiconductor memory device controlling output voltage level of high voltage generator according to temperature variation
AssigneeSamsung Electronics Co., Ltd.
InventorHwi-Taek Chung
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Abstract
A semiconductor memory device controlling an output voltage level of a high voltage generator in response to a variation of temperature has a high voltage generator that provides a high voltage higher than a power source voltage through an output terminal, generates a temperature detection signal obtained by sensing a variation of a diode current based on a temperature variation, and adjusts a voltage level of the output terminal in response to the temperature detection signal. The device is able to automatically control an output voltage or current of the high voltage generator.
Claims17
A semiconductor memory device comprising:
- a memory cell array;
- a high voltage generator providing a high voltage that exceeds a power source voltage to the memory cell array through an output terminal, generating a temperature detection signal by detecting a variation of a diode current in accordance with a variation of temperature, and adjusting a voltage level of the high voltage at the output terminal in response to the temperature detection signal from the diode.
A semiconductor memory device comprising:
- a memory cell array;
- a pump circuit providing the memory cell array with a high voltage obtained by boosting a power source voltage in response to a pumping enable signal;
- a regulator generating the pumping enable signal in accordance with an output voltage level of the pump circuit and adjusting the output voltage level of the pump circuit in response to a temperature detection signal;
- and
- a temperature detector including a diode and generating the temperature detection signal obtained by sensing a variation of the diode current according to a variation of temperature.
A semiconductor memory device comprising:
- a memory cell array;
- a pump circuit generating a high voltage obtained by boosting a power source voltage in response to a pumping enable signal, providing the high voltage to the memory cell array through an output terminal, and adjusting a voltage level of the output terminal in response to a temperature detection signal;
- a regulator connected to the output terminal of the pump circuit and generating the pumping enable signal in accordance with the voltage level of the output terminal;
- and
- a temperature detection circuit including a diode and generating the temperature detection signal obtained by sensing variation of the diode current according to a variation of temperature.
Dependencies are inferred from the claim text.