Three-dimensional magnetic memory having bits transferrable between storage layers

A magnetic memory, comprising:

• a first data storage layer defining a first plane, wherein magnetic domains in the first data storage layer represent a page of bits;
• a second data storage layer proximate to the first data storage layer that defines a second plane that is parallel to the first plane;
• and
• a means for transferring the magnetic domains from the first data storage layer to the second data storage layer by allowing magnetic fields from the magnetic domains representing the page of bits in the first data storage layer to create corresponding magnetic domains in the second data storage layer;
• wherein the magnetic domains in the second data storage layer represent the page of bits copied from the first data storage layer to the second data storage layer.

A three-dimensional solid state magnetic memory, comprising:

• a first storage stack defining a first X-Y plane, wherein the first storage stack stores an X-Y bit pattern comprising bits having a distinguishable magnetization;
• a first intermediate stack proximate to the first storage stack, wherein the first intermediate stack defines a second X-Y plane that is parallel to the first X-Y plane;
• a second storage stack proximate to the first intermediate stack, wherein the second storage stack defines a third X-Y plane that is parallel to the second X-Y plane;
• and
• a control system operable to control a transfer of the X-Y bit pattern from the first storage stack to the first intermediate stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the first storage stack replicate the X-Y bit pattern in the first intermediate stack;
• the control system further operable to control a transfer of the X-Y bit pattern from the first intermediate stack to the second storage stack in the Z direction by having the magnetization of the bits in the X-Y bit pattern in the first intermediate stack replicate the X-Y bit pattern in the second storage stack.

A method of fabricating a magnetic memory, the method comprising:

• forming a first storage stack defining a first plane;
• and
• forming a second storage stack proximate to the first storage stack, wherein the second storage stack defines a second plane that is parallel to the first plane;
• wherein the first and second storage stacks are operable to transfer magnetic domains representing a plurality of bits between each other.