Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Wook Jeong, Jun-Hyok Kong, Ji-Hye Yi, Beak-Hyung Cho
Life of this patent
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Abstract
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example the first crystalline phase may be a hexagonal closed packed structure and the first crystalline phase may be a face centered cubic structure.
Claims22
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device, comprising:
- performing an initial firing operation to convert at least the portion of the phase change material including a first crystalline phase to one of a second crystalline phase and an amorphous phase, the second crystalline phase transitioning to the amorphous phase more easily than the first crystalline phase;
- and
- applying the reset current for resetting at least the portion of the phase change material after the performing the initial firing operation step.
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device, comprising:
- performing an initial firing operation to convert at least the portion of the phase change material in a mixed phase state to a single phase state;
- and
- applying the reset current for resetting at least the portion of the phase change material after the performing the initial firing operation step.
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device to an amorphous phase, comprising:
- applying an initial firing current to the phase change material;
- and
- applying the reset current for resetting the portion of phase change material after the applying the initial firing current step, wherein
- the reset current of the phase change material after the applying the initial firing current step is less than a reset current before the applying the initial current step.
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device to an amorphous phase, comprising:
- performing a heat treatment on the phase change memory device;
- applying the reset current for resetting the portion of phase change material after the performing the heat treatment step, wherein
- the reset current of the phase change material after the performing the heat treatment step is less than a reset current before the performing the heat treatment step.
A method of improving operation a phase change memory device including at least one memory cell having phase change material, comprising:
- treating the phase change material such that an energy required to change a portion of the phase change material from a crystalline phase to an amorphous phase is reduced;
- and
- applying a rest current for resetting a portion of phase change material after the treating step.
Dependencies are inferred from the claim text.