Image sensor and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorShang Won Kim
Life of this patent
Estimating the term…
Abstract
An image sensor and fabricating method thereof are provided. The image sensor can include differently microlenses formed on a pixel array substrate. The differently shaped microlenses are formed using a phase mask where the light blocking region for each microlens pattern is positioned according to the relative angle of the microlens to a main lens. The phase shift mask results in a dome shaped microlens at a region of the pixel array substrate receiving incident light from the same axis as light incident the main lens and in asymmetrical shaped microlenses with a thicker region in a portion of the microlens farthest from the dome shaped microlens.
Claims6
A fabricating method of an image sensor comprising:
- coating a photoresist for a microlens on a pixel array substrate;
- forming a lens pattern array, each lens pattern having a step difference therein by exposing and developing the photoresist using an exposure mask;
- and
- reflowing the lens pattern array to form differently shaped microlenses,
- wherein the exposure mask is a half tone phase shift mask,
- wherein the half tone phase shift mask includes a light blocking area, a partial light transmitting area, and a total light transmitting area for each mask block of the exposure mask.
Dependencies are inferred from the claim text.