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US 7,605,889 B2Granted
Pixel structure and fabrication method thereof
AssigneeAu Optronics Corporation
InventorsYi-Wei Lee, Ching-Yun Chu, TzuFong Huang
Life of this patent
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Abstract
A pixel structure including a substrate, a gate, a dielectric layer, a semiconductor layer, a plurality of semiconductor bumps, a source, a drain and a reflective pixel electrode is disclosed. The gate is disposed on the substrate. The dielectric layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the dielectric layer over the gate. The semiconductor bumps are disposed on the dielectric layer. The source and drain are disposed on the semiconductor layer. The reflective pixel electrode covering the semiconductor bumps is disposed on the dielectric layer and electrically connected to the drain.
Claims15
A pixel structure, comprising:
- a substrate;
- a gate disposed on the substrate;
- a first dielectric layer, disposed over the substrate, covering the gate;
- a semiconductor layer disposed on the first dielectric layer above the gate;
- a plurality of semiconductor bumps disposed on the first dielectric layer;
- a source and a drain disposed on the semiconductor layer;
- and
- a reflective pixel electrode, disposed on the first dielectric layer and electrically connected to the drain, covering the semiconductor bumps, wherein the source, the drain and the reflective pixel electrode are formed with the same layer.
5 more elements
A pixel structure, comprising:
- a substrate;
- a gate disposed on the substrate;
- a first dielectric layer, disposed over the substrate, covering the gate;
- a semiconductor layer disposed on the first dielectric layer above the gate;
- a plurality of semiconductor bumps disposed on the first dielectric layer;
- a source and a drain disposed on the semiconductor layer;
- and
- a reflective pixel electrode, disposed on the first dielectric layer and electrically connected to the drain, covering the semiconductor bumps;
- a second dielectric layer, disposed above the first dielectric layer, covering the semiconductor layer, the source, the drain and the reflective pixel electrode and having a contact hole to expose a part of the drain;
- and
- a transparent pixel electrode disposed on the second dielectric layer and electrically connected to the drain through the contact hole.
8 more elements
A pixel structure, comprising:
- a substrate;
- a gate disposed on the substrate;
- a first dielectric layer, disposed over the substrate, covering the gate;
- a semiconductor layer disposed on the first dielectric layer above the gate;
- a plurality of semiconductor bumps disposed on the first dielectric layer;
- a source and a drain disposed on the semiconductor layer;
- and
- a second dielectric layer, disposed on the first dielectric layer, covering the semiconductor bumps and having a contact hole to expose a part of the drain;
- a reflective pixel electrode, disposed above the first dielectric layer and electrically connected to the drain, wherein the reflective pixel electrode is disposed on the second dielectric layer and is electrically connected to the drain through the contact hole;
- and
- a transparent pixel electrode disposed on the reflective pixel electrode and electrically connected to the drain through the reflective pixel electrode.
8 more elements
A pixel structure, comprising:
- a substrate;
- a gate disposed on the substrate;
- a first dielectric layer, disposed over the substrate, covering the gate;
- a semiconductor layer disposed on the first dielectric layer above the gate;
- a plurality of semiconductor bumps disposed on the first dielectric layer;
- a source and a drain disposed on the semiconductor layer;
- and
- a second dielectric layer, disposed on the first dielectric layer, covering the semiconductor bumps and having a contact hole to expose a part of the drain;
- a transparent pixel electrode disposed on the second dielectric layer and electrically connected to the drain through the contact hole;
- and
- a reflective pixel electrode, disposed on the transparent pixel electrode, wherein the reflective pixel electrode is electrically connected to the drain through the transparent pixel electrode.
8 more elements
A method for fabricating a pixel structure, comprising:
- providing a substrate;
- forming a gate on the substrate;
- forming a first dielectric layer over the substrate to cover the gate;
- forming a semiconductor layer and a plurality of semiconductor bumps on the first dielectric layer, wherein the semiconductor layer is located on the first dielectric layer over the gate;
- and
- forming a source, a drain and a reflective pixel electrode, wherein the source and the drain, respectively, cover a part of the semiconductor layer, and the reflective pixel electrode covering the semiconductor bumps is electrically connected to the drain, and the source, the drain and the reflective pixel electrode are formed with the same layer.
3 more elements
A method for fabricating a pixel structure, comprising:
- providing a substrate;
- forming a gate on the substrate;
- forming a first dielectric layer over the substrate to cover the gate;
- forming a semiconductor layer and a plurality of semiconductor bumps on the first dielectric layer, wherein the semiconductor layer is located on the first dielectric layer over the gate
- forming a source, a drain and a reflective pixel electrode, wherein the source and the drain, respectively, cover a part of the semiconductor layer, and the reflective pixel electrode covering the semiconductor bumps is electrically connected to the drain;
- forming a second dielectric layer, wherein the second dielectric layer covers the substrate and has a contact hole to expose a part of the drain;
- and
- forming a transparent pixel electrode on the second dielectric layer, wherein the transparent pixel electrode is electrically connected to the drain through the contact hole.
5 more elements
A method for fabricating a pixel structure, comprising:
- providing a substrate;
- forming a gate on the substrate;
- forming a first dielectric layer over the substrate so as to cover the gate;
- forming a semiconductor layer and a plurality of semiconductor bumps on the first dielectric layer, wherein the semiconductor layer is located on the first dielectric layer above the gate;
- forming a source and a drain on the first dielectric layer, wherein the source and the drain, respectively, cover a part of the semiconductor layer;
- forming a second dielectric layer on the substrate, wherein the second dielectric layer covers the substrate and the semiconductor bumps, and has a contact hole to expose a part of the drain
- forming a reflective pixel electrode on the second dielectric layer, wherein the reflective pixel electrode is electrically connected to the drain;
- and
- prior to forming a reflective pixel electrode on the second dielectric layer, forming a transparent pixel electrode on the second dielectric layer, wherein the transparent pixel electrode is electrically connected to the drain through the contact hole, and the reflective pixel electrode is electrically connected to the drain through the transparent pixel electrode.
6 more elements
A method for fabricating a pixel structure, comprising:
- providing a substrate;
- forming a gate on the substrate;
- forming a first dielectric layer over the substrate so as to cover the gate;
- forming a semiconductor layer and a plurality of semiconductor bumps on the first dielectric layer, wherein the semiconductor layer is located on the first dielectric layer above the gate;
- forming a source and a drain on the first dielectric layer, wherein the source and the drain, respectively, cover a part of the semiconductor layer;
- forming a second dielectric layer on the substrate, wherein the second dielectric layer covers the substrate and the semiconductor bumps, and has a contact hole to expose a part of the drain;
- forming a reflective pixel electrode on the second dielectric layer, wherein the reflective pixel electrode is electrically connected to the drain;
- and
- after forming a reflective pixel electrode on the second dielectric layer, forming a transparent pixel electrode on the reflective pixel electrode, wherein the transparent pixel electrode is electrically connected to the drain through the reflective pixel electrode.
6 more elements
Dependencies are inferred from the claim text.