Solid-state image sensing device and camera
AssigneePanasonic Corporation
InventorsNobuhiko Mutoh, Sei Suzuki
Life of this patent
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Abstract
A solid-state imaging device includes a source-follower amplifier having a driver transistor and a load circuit connected to the driver transistor. The load circuit is structured by a first MOS transistor having a gate with a fixed potential, and a load device connected to a source of the first MOS transistor. Furthermore, the load circuit of the source-follower amplifier is structured by a plurality of serially connected MOS transistors. Furthermore, by adapting a structure using a current mirror circuit, load conductance is reduced.
Claims8
A solid-state imaging device comprising:
- a source-follower amplifier having a driver transistor;
- and
- a load circuit which is connected to the driver transistor, said load circuit includes:
- a first metal-oxide semiconductor (MOS) transistor having a gate with a fixed potential;
- and
- a load device which is connected to a source of said first MOS transistor and includes a second MOS transistor,
- wherein the source of said first MOS transistor is connected to a drain of the second MOS transistor,
- the source of the first MOS transistor is connected to a gate and the drain of the second MOS transistor, and
- a channel width of the first MOS transistor and a channel width of the second MOS transistor are equal.
A camera comprising a solid-state imaging device,
- the solid-state imaging device comprising:
- a source-follower amplifier having a driver transistor;
- and
- a load circuit connected to the driver transistor, said load circuit includes:
- a first MOS transistor having a gate with a fixed potential;
- and
- a load device which is connected to a source of said first MOS transistor, and includes a second MOS transistor,
- wherein the source of said first MOS transistor is connected to a drain of the second MOS transistor,
- the source of first MOS transistor is connected to a gate and the drain of the second MOS transistor, and
- a channel width of the first MOS transistor and a channel width of the second MOS transistor are equal.
Dependencies are inferred from the claim text.