Semiconductor integrated circuit device
AssigneeKabushiki Kaisha Toshiba
InventorsFumihiko Tachibana, Takahiro Yamashita
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Abstract
A semiconductor integrated circuit device, has a semiconductor substrate; and a first transistor of a first conductivity type and a second transistor of the first conductivity type, the transistors being connected in series between a first power supply line and a first substrate well provided on the semiconductor substrate, the semiconductor integrated circuit device further comprising a first transistor of a second conductivity type and a second transistor of the second conductivity type, the transistors being connected in series between the second power supply line and a second substrate well provided on the semiconductor substrate.
Claims19
A semiconductor integrated circuit device, comprising:
- a semiconductor substrate;
- and
- a first transistor of a first conductivity type and a second transistor of the first conductivity type, the transistors being connected in series between a first power supply line and a first substrate well provided on the semiconductor substrate,
- the first transistor of the first conductivity type having a source or drain connected to the first power supply line and a gate fed with a first control signal inputted from outside,
- the second transistor of the first conductivity type having a source or drain connected to the first substrate well and a gate connected to a second power supply line,
- the semiconductor integrated circuit device further comprising a first transistor of a second conductivity type and a second transistor of the second conductivity type, the transistors being connected in series between the second power supply line and a second substrate well provided on the semiconductor substrate,
- the first transistor of the second conductivity type having a source or drain connected to the second power supply line and a gate fed with a second control signal inputted from the outside,
- the second transistor of the second conductivity type having a source or drain connected to the second substrate well and a gate connected to the first power supply line.
A semiconductor integrated circuit device, comprising:
- a semiconductor substrate;
- and
- a first transistor of a first conductivity type and a first transistor of a second conductivity type, the transistors being connected in series between a first power supply line and a first substrate well provided on the semiconductor substrate,
- the first transistor of the first conductivity type having a source or drain connected to the first power supply line and a gate fed with a first control signal inputted from outside,
- the first transistor of the second conductivity type having a source or drain connected to the first substrate well and a gate connected to the first power supply line,
- the semiconductor integrated circuit device further comprising a second transistor of the first conductivity type and a second transistor of the second conductivity type, the transistors being connected in series between a second power supply line and a second substrate well provided on the semiconductor substrate,
- the second transistor of the second conductivity type having a source or drain connected to the second power supply line and a gate fed with a second control signal inputted from the outside,
- the second transistor of the first conductivity type having a source or drain connected to the second substrate well and a gate connected to the second power supply line.
A semiconductor integrated circuit device, comprising:
- a semiconductor substrate;
- a logic cell formed on the semiconductor substrate;
- and
- a fill cell disposed in a region different from the logic cell on the semiconductor substrate,
- wherein the fill cell includes a plurality of pairs of transistors of a first conductivity type and a second conductivity type, the transistor of the second conductivity type being formed on a first substrate well, the transistor of the first conductivity type being formed on a second substrate well.
Dependencies are inferred from the claim text.