Interconnections having double capping layer and method for forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoung-woo Lee, Soo-geun Lee, Ki-chul Park, Won-sang Song
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Abstract
Provided are an interconnection of a semiconductor device which includes a capping layer and a method for forming the interconnection. The interconnection of the semiconductor device is a copper damascene interconnection where the capping layer is formed as a dual layer of a silicon nitride layer and silicon carbide layer on a copper layer processed by chemical mechanical polishing (CMP). Therefore, it is possible to maintain a high etching selectivity and a low dielectric constant of the silicon carbide layer while providing superior leakage suppression.
Claims11
An interconnection region of a semiconductor device comprising:
- an interlayer insulating film which has an opening therein in the shape of the interconnection, the interlayer insulating film being formed of a low-dielectric-constant material;
- a barrier metal layer which is formed along an inner wall of the opening;
- a metal layer which fills the opening over the barrier metal layer and has a top surface substantially level with a top surface of the interlayer insulating film;
- and
- a capping layer covering the top surfaces of the interlayer insulating film and the metal layer, the capping layer having a first layer comprising a silicon compound having a nitrogen moiety overlying the top surfaces of the interlayer insulating film and the metal layer and a second layer comprising a silicon compound having a carbon moiety directly on the first layer,
- wherein the interconnection is a dual damascene interconnection comprising a via and a wiring above the via.
Dependencies are inferred from the claim text.