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US 7,605,465 B2Granted
Semiconductor device for high frequency power amplification
AssigneeKabushiki Kaisha Toshiba
InventorKazutaka Takagi
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Abstract
A semiconductor device includes, a metal base plate, a semiconductor element mounted on the base plate, first and second dielectric plates are mounted on the base plate in the vicinity of the semiconductor element. The first and second dielectric plates are composed of such an insulator material as diamond having higher heat conductivity than that of the base plate material.
Claims16
A semiconductor device for high frequency power amplification comprising:
- a metal base plate having a function as a ground electrode;
- a semiconductor element for high frequency power amplification mounted on the base plate;
- a dielectric plate, which is formed with only an electrical insulator material having higher heat conductivity than that of the base plate material and is provided on the base plate adjacent to the semiconductor element;
- and
- a circuit pattern formed on a surface of the dielectric plate,
- wherein the heat conductivity of the dielectric plate having a higher heat conductivity than the base plate, is sufficiently higher than the heat conductivity of the base plate such that the heat from the semiconductor is spread through the base plate at an angle of about 45°.
3 more elements
A semiconductor device comprising:
- a base plate having a function as a ground electrode;
- a semiconductor element for high frequency power amplification mounted on the base plate;
- a first dielectric plate mounted on the base plate at one side of the semiconductor element, the first dielectric plate being configured to have a first circuit pattern on a surface of the first dielectric plate;
- a second dielectric plate mounted on the base plate at another side of the semiconductor element, the second dielectric plate being configured to have a second circuit pattern on a surface of the second dielectric plate;
- a frame-shaped side wall, provided on the base plate, configured to surround the first dielectric plate, the second dielectric plate and the semiconductor element;
- a power supply portion, provided in a part of the side wall, including an insulator;
- first and second band-shaped conductors configured to penetrate the power supply portion;
- and
- an interconnection configured to connect the first band-shaped conductor with the first circuit pattern, the first circuit pattern with the semiconductor element, the semiconductor element with the second circuit pattern and the second circuit pattern with the second band-shaped conductor,
- wherein at least one of the first dielectric plate and the second dielectric plate is provided adjacent to the semiconductor element, and is formed with only an electrical insulator having higher heat conductivity than the base plate,
- wherein the heat conductivity of the dielectric plate having a higher heat conductivity than the base plate, is sufficiently higher than the heat conductivity of the base plate such that the heat from the semiconductor is spread through the base plate at an angle of about 45°.
8 more elements
Dependencies are inferred from the claim text.