High frequency arrangement
AssigneeAtmel Automotive GmbH
InventorChristoph Bromberger
Life of this patent
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Abstract
A high frequency arrangement is provided that includes an integrated high frequency circuit, a first bond pad, which is electrically connected by a first electrical supply line, in particular a bond wire and/or a solder bump, to a housing terminal and/or another circuit, wherein the first bond pad adjoins a dielectric so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, and the first capacitance and the first supply line, which has an inductance, influence a (tuned) first resonant frequency associated with the high-frequency circuit.
Claims12
A high frequency arrangement comprising:
- an integrated high frequency circuit operating at a given operating frequency;
- a first bond pad being electrically connected by a first electrical supply line having an inductance to a housing terminal and/or another circuit, the first electrical supply line being a bond wire or a solder bump;
- and
- a dielectric that adjoins the first bond pad so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, wherein the first capacitance and the first supply line provide a first resonant frequency associated with the high-frequency circuit at a value substantially equal to the operating frequency of the high-frequency circuit.
A high frequency arrangement comprising:
- a high frequency circuit operating at a given operating frequency, the high frequency circuit being provided on a semiconductor chip that is connected to a housing terminal and/or an additional circuit by an electrical supply line having an inductance, the electrical supply line being a bond wire or a solder bump;
- and
- a series-resonant circuit being connected in parallel with the electrical supply line and providing a resonant frequency substantially equal to an operating frequency of the high-frequency circuit.
Dependencies are inferred from the claim text.