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US 7,605,442 B2Granted
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsOsamu Fujii, Tomoya Sanuki
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Abstract
A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.
Claims3
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of transistors provided in the semiconductor substrate, the plurality of transistors comprising a first conductivity type transistors and a second conductivity type transistors;
- and
- an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of a first insulation film formed on an inner wall of a trench formed in the semiconductor substrate, and a second insulation film filled on the first insulation film,
- wherein a first distance between an end face of the first insulation film, provided at a side of each of the first conductivity type transistors in the isolation region adjacent to each of the first conductivity type transistors, and a semiconductor substrate surface, is different from a second distance between the end face of the first insulation film, provided at a side of each of the second conductivity type transistors in the isolation region adjacent to the each of the second conductivity type transistors, and the semiconductor substrate surface.
2 more elements
Dependencies are inferred from the claim text.