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US 7,605,436 B2Granted
Manufacture of semiconductor device having insulation film of high dielectric constant
AssigneeFujitsu Limited
InventorMasaomi Yamaguchi
Life of this patent
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Abstract
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.
Claims3
A semiconductor device comprising:
- a silicon substrate having an active region;
- a gate insulation film formed on a surface of said active region of said silicon substrate, and including a high specific-dielectric-constant insulation film essentially consisting of oxide of Hf1-xAlx (0<x<0.3) and containing at least 0.5 at % of nitrogen, and having a specific dielectric constant higher than that of silicon oxide;
- a gate electrode formed on said gate insulation film and including an impurity-doped silicon layer;
- and
- source/drain regions formed on both sides of said gate electrode by doping impurity in said active region of said silicon substrate.
2 more elements
Dependencies are inferred from the claim text.